Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun-Yong Yu, Enes Battal, Ali Kemal Okyay, Jaewoo Shim, Jin Hong Park, Jung Woo Baek, Krishna C. Saraswat

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

Original languageEnglish
Pages (from-to)1060-1063
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number6
DOIs
Publication statusPublished - 2013 Aug 1

Fingerprint

Germanium
Epitaxial layers
Phosphorus
phosphorus
germanium
Doping (additives)
diffusivity
Epitaxial growth
activation energy
Activation energy
kinetics
Kinetics

Keywords

  • Activation energy
  • Diffusivity
  • Germanium
  • In-situ
  • Phosphorus

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers. / Yu, Hyun-Yong; Battal, Enes; Okyay, Ali Kemal; Shim, Jaewoo; Park, Jin Hong; Baek, Jung Woo; Saraswat, Krishna C.

In: Current Applied Physics, Vol. 13, No. 6, 01.08.2013, p. 1060-1063.

Research output: Contribution to journalArticle

Yu, Hyun-Yong ; Battal, Enes ; Okyay, Ali Kemal ; Shim, Jaewoo ; Park, Jin Hong ; Baek, Jung Woo ; Saraswat, Krishna C. / Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers. In: Current Applied Physics. 2013 ; Vol. 13, No. 6. pp. 1060-1063.
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