Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun-Yong Yu, Enes Battal, Ali Kemal Okyay, Jaewoo Shim, Jin Hong Park, Jung Woo Baek, Krishna C. Saraswat

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We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

Original languageEnglish
Pages (from-to)1060-1063
Number of pages4
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2013 Aug 1



  • Activation energy
  • Diffusivity
  • Germanium
  • In-situ
  • Phosphorus

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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