Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si

Jae-Sung Rieh, L. H. Lu, L. P.B. Katehi, P. K. Bhattacharya, E. T. Croke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.

Original languageEnglish
Title of host publication1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
EditorsSammy Kayali
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10-15
Number of pages6
Volume1998-September
ISBN (Electronic)0780352882, 9780780352889
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States
Duration: 1998 Sep 181998 Sep 18

Other

Other1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
CountryUnited States
CityAnn Arbor
Period98/9/1898/9/18

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Rieh, J-S., Lu, L. H., Katehi, L. P. B., Bhattacharya, P. K., & Croke, E. T. (1998). Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (Vol. 1998-September, pp. 10-15). [750169] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750169