Abstract
The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
| Original language | English |
|---|---|
| Title of host publication | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
| Editors | Sammy Kayali |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 10-15 |
| Number of pages | 6 |
| Volume | 1998-September |
| ISBN (Electronic) | 0780352882, 9780780352889 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
| Event | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sep 18 → 1998 Sep 18 |
Other
| Other | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 |
|---|---|
| Country | United States |
| City | Ann Arbor |
| Period | 98/9/18 → 98/9/18 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. / Rieh, Jae-Sung; Lu, L. H.; Katehi, L. P.B.; Bhattacharya, P. K.; Croke, E. T.
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. p. 10-15 750169.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si
AU - Rieh, Jae-Sung
AU - Lu, L. H.
AU - Katehi, L. P.B.
AU - Bhattacharya, P. K.
AU - Croke, E. T.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
AB - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
UR - http://www.scopus.com/inward/record.url?scp=37349054453&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=37349054453&partnerID=8YFLogxK
U2 - 10.1109/SMIC.1998.750169
DO - 10.1109/SMIC.1998.750169
M3 - Conference contribution
AN - SCOPUS:37349054453
VL - 1998-September
SP - 10
EP - 15
BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
A2 - Kayali, Sammy
PB - Institute of Electrical and Electronics Engineers Inc.
ER -