Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si

Jae-Sung Rieh; L. H. Lu; L. P.B. Katehi; P. K. Bhattacharya; E. T. Croke

doi:10.1109/SMIC.1998.750169

Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si

Jae-Sung Rieh, L. H. Lu, L. P.B. Katehi, P. K. Bhattacharya, E. T. Croke

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm²/V.s and 90.9 cm²/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×10¹⁹ cm^-3. The corresponding drift diffusion constants were 7.87 cm²/s and 2.37 cm²/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.

Original language	English
Title of host publication	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Editors	Sammy Kayali
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	10-15
Number of pages	6
Volume	1998-September
ISBN (Electronic)	0780352882, 9780780352889
DOIs	https://doi.org/10.1109/SMIC.1998.750169
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sep 18 → 1998 Sep 18

Other

Other	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Country	United States
City	Ann Arbor
Period	98/9/18 → 98/9/18

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Cite this

Rieh, J-S., Lu, L. H., Katehi, L. P. B., Bhattacharya, P. K., & Croke, E. T. (1998). Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (Vol. 1998-September, pp. 10-15). [750169] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750169

Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. / Rieh, Jae-Sung; Lu, L. H.; Katehi, L. P.B.; Bhattacharya, P. K.; Croke, E. T.

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. p. 10-15 750169.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rieh, J-S, Lu, LH, Katehi, LPB, Bhattacharya, PK & Croke, ET 1998, Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. vol. 1998-September, 750169, Institute of Electrical and Electronics Engineers Inc., pp. 10-15, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 98/9/18. https://doi.org/10.1109/SMIC.1998.750169

Rieh J-S, Lu LH, Katehi LPB, Bhattacharya PK, Croke ET. Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Vol. 1998-September. Institute of Electrical and Electronics Engineers Inc. 1998. p. 10-15. 750169 https://doi.org/10.1109/SMIC.1998.750169

Rieh, Jae-Sung ; Lu, L. H. ; Katehi, L. P.B. ; Bhattacharya, P. K. ; Croke, E. T. / Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. pp. 10-15

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abstract = "The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.",

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AU - Rieh, Jae-Sung

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AU - Katehi, L. P.B.

AU - Bhattacharya, P. K.

AU - Croke, E. T.

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N2 - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.

AB - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.

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Access to Document

10.1109/SMIC.1998.750169