TY - GEN
T1 - Experimental determination of minority electron mobility in p-type pseudomorphic SiGe/Si
AU - Rieh, J. S.
AU - Lu, L. H.
AU - Katehi, L. P.B.
AU - Bhattacharya, P. K.
AU - Croke, E. T.
PY - 1998
Y1 - 1998
N2 - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
AB - The minority electron mobility in the p-type pseudomorphic SiGe layer has been measured. SiGe/Si n-p-n HBTs have been fabricated with MBE-grown wafers and their DC and RF characteristics were used for the estimation of the mobility by the cutoff frequency method. The measured room temperature minority electron mobility values were found to be 302.7 cm2/V.s and 90.9 cm2/V.s for Ge composition of 20% and 40%, respectively, at the doping concentration of 7×1019 cm-3. The corresponding drift diffusion constants were 7.87 cm2/s and 2.37 cm2/s, respectively. The observed trend may be useful information for the optimization of SiGe/Si HBTs for high-speed operation.
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U2 - 10.1109/SMIC.1998.750169
DO - 10.1109/SMIC.1998.750169
M3 - Conference contribution
AN - SCOPUS:37349054453
T3 - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
SP - 10
EP - 15
BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
A2 - Kayali, Sammy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Y2 - 18 September 1998 through 18 September 1998
ER -