Experimental study of plasmonically enhanced GaN nanowire light emitters

Michael A. Mastro, Jaime A. Freitas, Mark Twigg, R. T. Holm, Charles R. Eddy, Fritz Kub, Hong Yeol Kim, Jaehui Ahn, Ji Hyun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Plasmonic-enhanced emission was achieved from a III-nitride none-wire optoelectronic device. The III-nitride system has been widely applied to light emitters in the blue, violet and ultra-violet portions of the electromagnetic spectrum. One limit to its application has been the efficiency reduction associated with the inherently defective nature (particularly threading dislocations) of the material that is typically grown by hetero-epitaxy. The VLS fabrication technique inherently yields defect-free material that serves as an excellent emission and gain media. A two-step approach was developed in a metalorganic chemical vapor deposition system to grow nano-wires initially vertically by the VLS mechanism and, when necessary, laterally by altering the growth conditions. Furthermore, various silver coatings were employed to enhance the plasmonic-based transfer of electromagnetic energy generated in the nano-wire to the external near-field.

Original languageEnglish
Pages (from-to)378-382
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Nanowires
emitters
nanowires
wire
Wire
Nitrides
nitrides
electromagnetic spectra
Metallorganic chemical vapor deposition
optoelectronic devices
Silver
Epitaxial growth
Electromagnetic waves
Optoelectronic devices
epitaxy
metalorganic chemical vapor deposition
near fields
silver
electromagnetism
coatings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Experimental study of plasmonically enhanced GaN nanowire light emitters. / Mastro, Michael A.; Freitas, Jaime A.; Twigg, Mark; Holm, R. T.; Eddy, Charles R.; Kub, Fritz; Kim, Hong Yeol; Ahn, Jaehui; Kim, Ji Hyun.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 205, No. 2, 01.02.2008, p. 378-382.

Research output: Contribution to journalArticle

Mastro, MA, Freitas, JA, Twigg, M, Holm, RT, Eddy, CR, Kub, F, Kim, HY, Ahn, J & Kim, JH 2008, 'Experimental study of plasmonically enhanced GaN nanowire light emitters', Physica Status Solidi (A) Applications and Materials Science, vol. 205, no. 2, pp. 378-382. https://doi.org/10.1002/pssa.200723148
Mastro, Michael A. ; Freitas, Jaime A. ; Twigg, Mark ; Holm, R. T. ; Eddy, Charles R. ; Kub, Fritz ; Kim, Hong Yeol ; Ahn, Jaehui ; Kim, Ji Hyun. / Experimental study of plasmonically enhanced GaN nanowire light emitters. In: Physica Status Solidi (A) Applications and Materials Science. 2008 ; Vol. 205, No. 2. pp. 378-382.
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