Experiments on anisotropic etching of Si in TMAH

Jae Sung You; Donghwan Kim; Joo Youl Huh; Ho Joon Park; James Jungho Pak; Choon Sik Kang

doi:10.1016/S0927-0248(00)00156-2

Experiments on anisotropic etching of Si in TMAH

Jae Sung You, Donghwan Kim, Joo Youl Huh, Ho Joon Park, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journal › Article

72 Citations (Scopus)

Abstract

Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

Original language	English
Pages (from-to)	37-44
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(00)00156-2
Publication status	Published - 2001 Feb 1

Fingerprint

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Cite this

You, J. S., Kim, D., Huh, J. Y., Park, H. J., Pak, J. J., & Kang, C. S. (2001). Experiments on anisotropic etching of Si in TMAH. Solar Energy Materials and Solar Cells, 66(1-4), 37-44. https://doi.org/10.1016/S0927-0248(00)00156-2

@article{5a7b194f4ded4cf18e932510fd1d9473,

title = "Experiments on anisotropic etching of Si in TMAH",

abstract = "Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.",

author = "You, {Jae Sung} and Donghwan Kim and Huh, {Joo Youl} and Park, {Ho Joon} and Pak, {James Jungho} and Kang, {Choon Sik}",

year = "2001",

month = feb

day = "1",

doi = "10.1016/S0927-0248(00)00156-2",

language = "English",

volume = "66",

pages = "37--44",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Experiments on anisotropic etching of Si in TMAH

AU - You, Jae Sung

AU - Kim, Donghwan

AU - Huh, Joo Youl

AU - Park, Ho Joon

AU - Pak, James Jungho

AU - Kang, Choon Sik

PY - 2001/2/1

Y1 - 2001/2/1

N2 - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

AB - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

UR - http://www.scopus.com/inward/record.url?scp=0035254785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035254785&partnerID=8YFLogxK

U2 - 10.1016/S0927-0248(00)00156-2

DO - 10.1016/S0927-0248(00)00156-2

M3 - Article

AN - SCOPUS:0035254785

VL - 66

SP - 37

EP - 44

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1-4

ER -

Access to Document

10.1016/S0927-0248(00)00156-2