Experiments on anisotropic etching of Si in TMAH

Jae Sung You, Donghwan Kim, Joo Youl Huh, Ho Joon Park, James Jungho Pak, Choon Sik Kang

Research output: Contribution to journal › Article

71 Citations (Scopus)

Abstract

Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

Original languageEnglish
Pages (from-to)37-44
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume66
Issue number1-4
DOIs
Publication statusPublished - 2001 Feb 1

Fingerprint

Anisotropic etching
Etching
Experiments
Temperature

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Experiments on anisotropic etching of Si in TMAH. / You, Jae Sung; Kim, Donghwan; Huh, Joo Youl; Park, Ho Joon; Pak, James Jungho; Kang, Choon Sik.

In: Solar Energy Materials and Solar Cells, Vol. 66, No. 1-4, 01.02.2001, p. 37-44.

Research output: Contribution to journal › Article

You, JS, Kim, D, Huh, JY, Park, HJ, Pak, JJ & Kang, CS 2001, 'Experiments on anisotropic etching of Si in TMAH', Solar Energy Materials and Solar Cells, vol. 66, no. 1-4, pp. 37-44. https://doi.org/10.1016/S0927-0248(00)00156-2
You JS, Kim D, Huh JY, Park HJ, Pak JJ, Kang CS. Experiments on anisotropic etching of Si in TMAH. Solar Energy Materials and Solar Cells. 2001 Feb 1;66(1-4):37-44. https://doi.org/10.1016/S0927-0248(00)00156-2
You, Jae Sung ; Kim, Donghwan ; Huh, Joo Youl ; Park, Ho Joon ; Pak, James Jungho ; Kang, Choon Sik. / Experiments on anisotropic etching of Si in TMAH. In: Solar Energy Materials and Solar Cells. 2001 ; Vol. 66, No. 1-4. pp. 37-44.
@article{5a7b194f4ded4cf18e932510fd1d9473,
title = "Experiments on anisotropic etching of Si in TMAH",
abstract = "Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt{\%}). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2{\%} was obtained by near normal incident reflectivity measurement.",
author = "You, {Jae Sung} and Donghwan Kim and Huh, {Joo Youl} and Park, {Ho Joon} and Pak, {James Jungho} and Kang, {Choon Sik}",
year = "2001",
month = "2",
day = "1",
doi = "10.1016/S0927-0248(00)00156-2",
language = "English",
volume = "66",
pages = "37--44",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Experiments on anisotropic etching of Si in TMAH

AU - You, Jae Sung

AU - Kim, Donghwan

AU - Huh, Joo Youl

AU - Park, Ho Joon

AU - Pak, James Jungho

AU - Kang, Choon Sik

PY - 2001/2/1

Y1 - 2001/2/1

N2 - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

AB - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.

UR - http://www.scopus.com/inward/record.url?scp=0035254785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035254785&partnerID=8YFLogxK

U2 - 10.1016/S0927-0248(00)00156-2

DO - 10.1016/S0927-0248(00)00156-2

M3 - Article

VL - 66

SP - 37

EP - 44

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1-4

ER -

Access to Document