Abstract
Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.
| Original language | English |
|---|---|
| Pages (from-to) | 37-44 |
| Number of pages | 8 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 66 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2001 Feb 1 |
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ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
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Experiments on anisotropic etching of Si in TMAH. / You, Jae Sung; Kim, Donghwan; Huh, Joo Youl; Park, Ho Joon; Pak, James Jungho; Kang, Choon Sik.
In: Solar Energy Materials and Solar Cells, Vol. 66, No. 1-4, 01.02.2001, p. 37-44.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experiments on anisotropic etching of Si in TMAH
AU - You, Jae Sung
AU - Kim, Donghwan
AU - Huh, Joo Youl
AU - Park, Ho Joon
AU - Pak, James Jungho
AU - Kang, Choon Sik
PY - 2001/2/1
Y1 - 2001/2/1
N2 - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.
AB - Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.
UR - http://www.scopus.com/inward/record.url?scp=0035254785&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035254785&partnerID=8YFLogxK
U2 - 10.1016/S0927-0248(00)00156-2
DO - 10.1016/S0927-0248(00)00156-2
M3 - Article
AN - SCOPUS:0035254785
VL - 66
SP - 37
EP - 44
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1-4
ER -