Abstract
Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 °C, 80 °C and 90 °C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectance as low as 0.2% was obtained by near normal incident reflectivity measurement.
| Original language | English |
|---|---|
| Pages (from-to) | 37-44 |
| Number of pages | 8 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 66 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2001 Feb 1 |
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
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You, J. S., Kim, D., Huh, J. Y., Park, H. J., Pak, J. J., & Kang, C. S. (2001). Experiments on anisotropic etching of Si in TMAH. Solar Energy Materials and Solar Cells, 66(1-4), 37-44. https://doi.org/10.1016/S0927-0248(00)00156-2