Abstract
We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.
| Original language | English |
|---|---|
| Pages (from-to) | 1795-1799 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 312 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2010 May 15 |
| Externally published | Yes |
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Keywords
- A1. Defects
- A1. Etching
- B2. Semiconducting II-VI materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Extended defects in CdZnTe crystals : Effects on device performance. / Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Yang, G.; Kim, Kihyun; Gul, R.; Xu, L.; James, R. B.
In: Journal of Crystal Growth, Vol. 312, No. 11, 15.05.2010, p. 1795-1799.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Extended defects in CdZnTe crystals
T2 - Effects on device performance
AU - Hossain, A.
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - Cui, Y.
AU - Yang, G.
AU - Kim, Kihyun
AU - Gul, R.
AU - Xu, L.
AU - James, R. B.
PY - 2010/5/15
Y1 - 2010/5/15
N2 - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.
AB - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.
KW - A1. Defects
KW - A1. Etching
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=77951209239&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951209239&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.03.005
DO - 10.1016/j.jcrysgro.2010.03.005
M3 - Article
AN - SCOPUS:77951209239
VL - 312
SP - 1795
EP - 1799
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 11
ER -