Extended defects in CdZnTe crystals: Effects on device performance

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, Kihyun Kim, R. Gul, L. Xu, R. B. James

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.

Original languageEnglish
Pages (from-to)1795-1799
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number11
DOIs
Publication statusPublished - 2010 May 15
Externally publishedYes

Fingerprint

zinc tellurides
cadmium tellurides
Cadmium
Zinc
Defects
Crystals
defects
crystals
Charge transfer
Detectors
detectors
spectral sensitivity
Dislocations (crystals)
Transport properties
Etching
spatial resolution
transport properties
signatures
etching
X rays

Keywords

  • A1. Defects
  • A1. Etching
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Hossain, A., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Yang, G., Kim, K., ... James, R. B. (2010). Extended defects in CdZnTe crystals: Effects on device performance. Journal of Crystal Growth, 312(11), 1795-1799. https://doi.org/10.1016/j.jcrysgro.2010.03.005

Extended defects in CdZnTe crystals : Effects on device performance. / Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Yang, G.; Kim, Kihyun; Gul, R.; Xu, L.; James, R. B.

In: Journal of Crystal Growth, Vol. 312, No. 11, 15.05.2010, p. 1795-1799.

Research output: Contribution to journalArticle

Hossain, A, Bolotnikov, AE, Camarda, GS, Cui, Y, Yang, G, Kim, K, Gul, R, Xu, L & James, RB 2010, 'Extended defects in CdZnTe crystals: Effects on device performance', Journal of Crystal Growth, vol. 312, no. 11, pp. 1795-1799. https://doi.org/10.1016/j.jcrysgro.2010.03.005
Hossain, A. ; Bolotnikov, A. E. ; Camarda, G. S. ; Cui, Y. ; Yang, G. ; Kim, Kihyun ; Gul, R. ; Xu, L. ; James, R. B. / Extended defects in CdZnTe crystals : Effects on device performance. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 11. pp. 1795-1799.
@article{64b4f3b351844804b778945e7d463641,
title = "Extended defects in CdZnTe crystals: Effects on device performance",
abstract = "We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.",
keywords = "A1. Defects, A1. Etching, B2. Semiconducting II-VI materials",
author = "A. Hossain and Bolotnikov, {A. E.} and Camarda, {G. S.} and Y. Cui and G. Yang and Kihyun Kim and R. Gul and L. Xu and James, {R. B.}",
year = "2010",
month = "5",
day = "15",
doi = "10.1016/j.jcrysgro.2010.03.005",
language = "English",
volume = "312",
pages = "1795--1799",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "11",

}

TY - JOUR

T1 - Extended defects in CdZnTe crystals

T2 - Effects on device performance

AU - Hossain, A.

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - Cui, Y.

AU - Yang, G.

AU - Kim, Kihyun

AU - Gul, R.

AU - Xu, L.

AU - James, R. B.

PY - 2010/5/15

Y1 - 2010/5/15

N2 - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.

AB - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.

KW - A1. Defects

KW - A1. Etching

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=77951209239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951209239&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.03.005

DO - 10.1016/j.jcrysgro.2010.03.005

M3 - Article

AN - SCOPUS:77951209239

VL - 312

SP - 1795

EP - 1799

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 11

ER -