Extended defects in CdZnTe crystals: Effects on device performance

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, K. H. Kim, R. Gul, L. Xu, R. B. James

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.

Original languageEnglish
Pages (from-to)1795-1799
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number11
DOIs
Publication statusPublished - 2010 May 15
Externally publishedYes

Keywords

  • A1. Defects
  • A1. Etching
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Hossain, A., Bolotnikov, A. E., Camarda, G. S., Cui, Y., Yang, G., Kim, K. H., Gul, R., Xu, L., & James, R. B. (2010). Extended defects in CdZnTe crystals: Effects on device performance. Journal of Crystal Growth, 312(11), 1795-1799. https://doi.org/10.1016/j.jcrysgro.2010.03.005