TY - JOUR
T1 - Extended defects in CdZnTe crystals
T2 - Effects on device performance
AU - Hossain, A.
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - Cui, Y.
AU - Yang, G.
AU - Kim, K. H.
AU - Gul, R.
AU - Xu, L.
AU - James, R. B.
N1 - Funding Information:
This work was supported by U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates , LLC under Contract no. DE-AC02-98CH1-886 with the U.S. Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.
PY - 2010/5/15
Y1 - 2010/5/15
N2 - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.
AB - We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×102 and 1×103 per cm3. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors' volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.
KW - A1. Defects
KW - A1. Etching
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=77951209239&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.03.005
DO - 10.1016/j.jcrysgro.2010.03.005
M3 - Article
AN - SCOPUS:77951209239
VL - 312
SP - 1795
EP - 1799
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 11
ER -