Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors

Luryi Choi, Byoung Hak Hong, Young Chai Jung, Keun Hwi Cho, Kyoung Hwan Yeo, Dong Won Kim, Gyo Young Jin, Kyung Seok Oh, Won Seong Lee, Sang Hun Song, Jae Sung Rieh, Dong Mok Whang, Sung Woo Hwang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors are extracted using the same mobility-degradation model as in the case of planar MOSFETs. The extraction is done by defining an asymptotic voltage as a function of the saturation current measured from devices with various lengths. The extracted mobility-degradation factor is an order of magnitude larger than those of other planar MOSFETs. This result suggests that, while the all-around gate can turn off the electron channel effectively, it creates more interface scattering in the strong inversion condition. The extracted series resistance is mostly due to the crowding of the electron flow along the sidewall of the n+ contact region making an abrupt joint with the nanowire.

Original languageEnglish
Pages (from-to)665-667
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
Publication statusPublished - 2009

Keywords

  • Gate-all-around (GAA)
  • Mobility-degradation factor
  • Nanowire
  • Series resistance
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Choi, L., Hong, B. H., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D. W., Jin, G. Y., Oh, K. S., Lee, W. S., Song, S. H., Rieh, J. S., Whang, D. M., & Hwang, S. W. (2009). Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors. IEEE Electron Device Letters, 30(6), 665-667. https://doi.org/10.1109/LED.2009.2019977