Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors

Luryi Choi, Byoung Hak Hong, Young Chai Jung, Keun Hwi Cho, Kyoung Hwan Yeo, Dong Won Kim, Gyo Young Jin, Kyung Seok Oh, Won Seong Lee, Sang Hun Song, Jae-Sung Rieh, Dong Mok Whang, Sung Woo Hwang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors are extracted using the same mobility-degradation model as in the case of planar MOSFETs. The extraction is done by defining an asymptotic voltage as a function of the saturation current measured from devices with various lengths. The extracted mobility-degradation factor is an order of magnitude larger than those of other planar MOSFETs. This result suggests that, while the all-around gate can turn off the electron channel effectively, it creates more interface scattering in the strong inversion condition. The extracted series resistance is mostly due to the crowding of the electron flow along the sidewall of the n+ contact region making an abrupt joint with the nanowire.

Original languageEnglish
Pages (from-to)665-667
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
Publication statusPublished - 2009 May 18

Fingerprint

Silicon
Field effect transistors
Nanowires
Degradation
Electrons
Scattering
Electric potential

Keywords

  • Gate-all-around (GAA)
  • Mobility-degradation factor
  • Nanowire
  • Series resistance
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors. / Choi, Luryi; Hong, Byoung Hak; Jung, Young Chai; Cho, Keun Hwi; Yeo, Kyoung Hwan; Kim, Dong Won; Jin, Gyo Young; Oh, Kyung Seok; Lee, Won Seong; Song, Sang Hun; Rieh, Jae-Sung; Whang, Dong Mok; Hwang, Sung Woo.

In: IEEE Electron Device Letters, Vol. 30, No. 6, 18.05.2009, p. 665-667.

Research output: Contribution to journalArticle

Choi, L, Hong, BH, Jung, YC, Cho, KH, Yeo, KH, Kim, DW, Jin, GY, Oh, KS, Lee, WS, Song, SH, Rieh, J-S, Whang, DM & Hwang, SW 2009, 'Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors', IEEE Electron Device Letters, vol. 30, no. 6, pp. 665-667. https://doi.org/10.1109/LED.2009.2019977
Choi, Luryi ; Hong, Byoung Hak ; Jung, Young Chai ; Cho, Keun Hwi ; Yeo, Kyoung Hwan ; Kim, Dong Won ; Jin, Gyo Young ; Oh, Kyung Seok ; Lee, Won Seong ; Song, Sang Hun ; Rieh, Jae-Sung ; Whang, Dong Mok ; Hwang, Sung Woo. / Extracting mobility degradation and total series resistance of cylindrical gate-all-around silicon nanowire field-effect transistors. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 6. pp. 665-667.
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