Extracting the device parameters from organic thin film transistors

Eung Seok Park, Pil Soo Kang, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
PublisherMaterials Research Society
Pages327-332
Number of pages6
ISBN (Print)9781604234176
DOIs
Publication statusPublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume965
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Park, E. S., Kang, P. S., & Kim, G. T. (2006). Extracting the device parameters from organic thin film transistors. In Organic Electronics: Materials, Devices and Applications (pp. 327-332). (Materials Research Society Symposium Proceedings; Vol. 965). Materials Research Society. https://doi.org/10.1557/proc-0965-s06-12