Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors

Dae Young Jeon, Dong Su Lee, Seoung Ki Lee, Min Park, So Jeong Park, Gyu-Tae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.

Original languageEnglish
Pages (from-to)3050-3053
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume65
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

Fingerprint

Field effect transistors
Transistors
Drain current
Molybdenum
Transition metals
Crystals
molybdenum disulfide

Keywords

  • 2-D transition-metal dichalcogenides (TMDs)
  • bulk channel mobility
  • maximum depletion width
  • partially depleted (PD)
  • series resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors. / Jeon, Dae Young; Lee, Dong Su; Lee, Seoung Ki; Park, Min; Park, So Jeong; Kim, Gyu-Tae.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 7, 01.07.2018, p. 3050-3053.

Research output: Contribution to journalArticle

Jeon, Dae Young ; Lee, Dong Su ; Lee, Seoung Ki ; Park, Min ; Park, So Jeong ; Kim, Gyu-Tae. / Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors. In: IEEE Transactions on Electron Devices. 2018 ; Vol. 65, No. 7. pp. 3050-3053.
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