Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Hyung Youl Park, Woo Shik Jung, Dong Ho Kang, Jaeho Jeon, Gwangwe Yoo, Yongkook Park, Jinhee Lee, Yun Hee Jang, Jaeho Lee, Seongjun Park, Hyun-Yong Yu, Byungha Shin, Sungjoo Lee, Jin Hong Park

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34 Citations (Scopus)


The effects of graphene n-doping on M-G contact resistance was investigated in combination with edge contacts, presenting a record contact resistance of 23 ω μm at room temperature. The graphene n-doping was achieved through the charge transfer from PVP/PMF insulator with triazine functional groups which are electron-rich aromatic molecules. The degree of doping was also controlled by adjusting the ratio of PMF to PVP. Through n-doping the graphene by 400% PVP/PMF layer, about two times lower contact resistance value was obtained compared to the 2D surface contact resistance on pristine graphene. However, after the n-doping, the 2D contacted metals did not affect the Fermi-level of graphene similarly to the previous pristine graphene samples due to the already achieved larger DOS, making the contact resistance to be less dependent on the metal type. In addition, to understand the impact of edge contact on the M?G contact resistance, currents flowing through the 2D graphene surface and patterned graphene edge were experimentally investigated by using various patterns with different perimeter-to-area ratio it was confirmed that it was about three times lower contact resistance in the edge 3 pattern with 1 μm wide periodic lines/gaps.

Original languageEnglish
Pages (from-to)864-870
Number of pages7
JournalAdvanced Materials
Issue number5
Publication statusPublished - 2016



  • contact resistance
  • doping
  • edge contact
  • graphene
  • optoelectronic devices

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, H. Y., Jung, W. S., Kang, D. H., Jeon, J., Yoo, G., Park, Y., ... Park, J. H. (2016). Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. Advanced Materials, 28(5), 864-870. https://doi.org/10.1002/adma.201503715