Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications

Gyu Ri Hong, Sun Sook Lee, Yejin Jo, Min Jun Choi, Yun Chan Kang, Beyong Hwan Ryu, Kwun Bum Chung, Youngmin Choi, Sunho Jeong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm 2 /(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.

Original languageEnglish
Pages (from-to)29858-29865
Number of pages8
JournalACS Applied Materials and Interfaces
Volume8
Issue number44
DOIs
Publication statusPublished - 2016 Nov 9

Keywords

  • carbon nanotube
  • low cost
  • oxide semiconductor
  • scalable
  • thin-film transistor

ASJC Scopus subject areas

  • Materials Science(all)

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