Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device

E. K. Kim, H. Y. Lee, J. Park, S. J. Park, J. H. Kwak, S. E. Moon, S. Maeng, K. H. Park, S. W. Kim, H. J. Ji, Gyu-Tae Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A single ZnO nanowire device was fabricated by electron-beam lithography, and its current-voltage characteristics were recorded while varying the atmospheric pressure to test possible applications as a chemical gas sensor. Vertically well aligned ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. Semiconducting nanowire devices were fabricated by using photolithography and e-beam lithography, and their electrical properties were studied. To realize reliable device operation, which is a key factor for a chemical sensor, the contact resistance should be optimized. Here, we studied the contact-resistance problem by using a scanning probe microscopic tool to characterize surface-potential behaviors. To overcome the contact-resistance problem, a post thermal process was adapted to the nanowire device. Atmospheric-pressure-dependent electrical properties of the ZnO nanowire device were studied for chemical-sensor application.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume51
Issue numberSUPPL. 2
Publication statusPublished - 2007 Oct 1

Fingerprint

atmospheric pressure
nanowires
electrical properties
fabrication
contact resistance
sensors
lithography
photolithography
sapphire
electron beams
vapors
catalysts
scanning
probes
electric potential
liquids
thin films
gases

Keywords

  • Chemical sensor
  • Nanowire device

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, E. K., Lee, H. Y., Park, J., Park, S. J., Kwak, J. H., Moon, S. E., ... Kim, G-T. (2007). Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device. Journal of the Korean Physical Society, 51(SUPPL. 2).

Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device. / Kim, E. K.; Lee, H. Y.; Park, J.; Park, S. J.; Kwak, J. H.; Moon, S. E.; Maeng, S.; Park, K. H.; Kim, S. W.; Ji, H. J.; Kim, Gyu-Tae.

In: Journal of the Korean Physical Society, Vol. 51, No. SUPPL. 2, 01.10.2007.

Research output: Contribution to journalArticle

Kim, EK, Lee, HY, Park, J, Park, SJ, Kwak, JH, Moon, SE, Maeng, S, Park, KH, Kim, SW, Ji, HJ & Kim, G-T 2007, 'Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device', Journal of the Korean Physical Society, vol. 51, no. SUPPL. 2.
Kim, E. K. ; Lee, H. Y. ; Park, J. ; Park, S. J. ; Kwak, J. H. ; Moon, S. E. ; Maeng, S. ; Park, K. H. ; Kim, S. W. ; Ji, H. J. ; Kim, Gyu-Tae. / Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device. In: Journal of the Korean Physical Society. 2007 ; Vol. 51, No. SUPPL. 2.
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