Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

G. B. Kang; J. M. Park; S. G. Kim; J. G. Koo; J. H. Park; Y. S. Sohn; Y. T. Kim

doi:10.1049/el:20081876

Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

G. B. Kang, J. M. Park, S. G. Kim, J. G. Koo, J. H. Park, Y. S. Sohn, Y. T. Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3%.

Original language	English
Journal	Electronics Letters
Volume	44
Issue number	16
DOIs	https://doi.org/10.1049/el:20081876
Publication status	Published - 2008

ASJC Scopus subject areas

Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1049/el:20081876

Cite this

@article{3b65c8e612a34230bfbaf2e69a153fa2,

title = "Fabrication and characterisation of CMOS compatible silicon nanowire biosensor",

abstract = "A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3%.",

author = "Kang, {G. B.} and Park, {J. M.} and Kim, {S. G.} and Koo, {J. G.} and Park, {J. H.} and Sohn, {Y. S.} and Kim, {Y. T.}",

year = "2008",

doi = "10.1049/el:20081876",

language = "English",

volume = "44",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "16",

}

TY - JOUR

T1 - Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

AU - Kang, G. B.

AU - Park, J. M.

AU - Kim, S. G.

AU - Koo, J. G.

AU - Park, J. H.

AU - Sohn, Y. S.

AU - Kim, Y. T.

PY - 2008

Y1 - 2008

N2 - A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3%.

AB - A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3%.

UR - http://www.scopus.com/inward/record.url?scp=49149097342&partnerID=8YFLogxK

U2 - 10.1049/el:20081876

DO - 10.1049/el:20081876

M3 - Article

AN - SCOPUS:49149097342

SN - 0013-5194

VL - 44

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this