Abstract
We fabricated nano-devices with V2O5 nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V 2O5 nanowires on p-type Si substrates, HfO2 dielectrics and Au gate were deposited on the V2O5 nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, Au nano-electrodes with a 30 nm gap were fabricated on a SiO2/SI substrate by using electron-beam lithography. This device with V2O5 nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V2O5 nanowires for memory and tunneling devices may be feasible.
Original language | English |
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Pages (from-to) | 1819-1822 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 50 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 Jun |
Keywords
- Metal-insulator-semiconductor
- Nanowires
- Tunneling device
ASJC Scopus subject areas
- Physics and Astronomy(all)