Fabrication and characterization of a nano-device with v₂O ₅ nanowires

We fabricated nano-devices with V₂O₅ nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V ₂O₅ nanowires on p-type Si substrates, HfO₂ dielectrics and Au gate were deposited on the V₂O₅ nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, Au nano-electrodes with a 30 nm gap were fabricated on a SiO₂/SI substrate by using electron-beam lithography. This device with V₂O₅ nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V₂O₅ nanowires for memory and tunneling devices may be feasible.