Fabrication and characterization of high efficiency green nanopillar LED

Jin Woo Ju, Jong Hyeob Baek, Seung Jae Lee, Dae Woo Jeon, Jae Woo Park, Jung Hun Choi, Lee Woon Jang, In Hwan Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.

Original languageEnglish
Pages (from-to)332-335
Number of pages4
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1

Keywords

  • A1. HRXRD
  • A3. Epitaxial lateral overgrowth
  • A3. MOCVD
  • B2. Semipolar gan

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Ju, J. W., Baek, J. H., Lee, S. J., Jeon, D. W., Park, J. W., Choi, J. H., Jang, L. W., & Lee, I. H. (2013). Fabrication and characterization of high efficiency green nanopillar LED. Journal of Crystal Growth, 370, 332-335. https://doi.org/10.1016/j.jcrysgro.2012.08.051