Fabrication and characterization of high efficiency green nanopillar LED

Jin Woo Ju, Jong Hyeob Baek, Seung Jae Lee, Dae Woo Jeon, Jae Woo Park, Jung Hun Choi, Lee Woon Jang, In-Hwan Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar.

Original languageEnglish
Pages (from-to)332-335
Number of pages4
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1
Externally publishedYes

Fingerprint

Light emitting diodes
light emitting diodes
Fabrication
fabrication
Strain relaxation
Plasma etching
Inductively coupled plasma
plasma etching
Semiconductor quantum wells
Masks
Photoluminescence
masks
quantum wells
photoluminescence

Keywords

  • A1. HRXRD
  • A3. Epitaxial lateral overgrowth
  • A3. MOCVD
  • B2. Semipolar gan

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Fabrication and characterization of high efficiency green nanopillar LED. / Ju, Jin Woo; Baek, Jong Hyeob; Lee, Seung Jae; Jeon, Dae Woo; Park, Jae Woo; Choi, Jung Hun; Jang, Lee Woon; Lee, In-Hwan.

In: Journal of Crystal Growth, Vol. 370, 01.05.2013, p. 332-335.

Research output: Contribution to journalArticle

Ju, Jin Woo ; Baek, Jong Hyeob ; Lee, Seung Jae ; Jeon, Dae Woo ; Park, Jae Woo ; Choi, Jung Hun ; Jang, Lee Woon ; Lee, In-Hwan. / Fabrication and characterization of high efficiency green nanopillar LED. In: Journal of Crystal Growth. 2013 ; Vol. 370. pp. 332-335.
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