Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers

S. W. Hwang, Y. S. Yu, W. I. Ha, T. G. Kim, C. K. Han, J. H. Park, M. S. Kim, E. K. Kim, S. K. Min

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.

Original languageEnglish
Pages (from-to)1924-1926
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number13
DOIs
Publication statusPublished - 1996 Sep 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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