A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)