Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm2/Vs

Hoon Seok Seo, Young Se Jang, Ying Zhang, P. Syed Abthagir, Jong-Ho Choi

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67 Citations (Scopus)


Pentacene-based transistors produced by a novel neutral cluster beam deposition method were characterized, and the effects of the surface pretreatments were examined. Atomic force microscopy and X-ray diffraction showed that the cluster beams were quite efficient in growing high-quality, crystalline thin films on SiO2 substrates at room-temperature without any thermal post-treatment, and that an amphiphilic surfactant, octadecyltrichlorosilane (OTS), enhances the packing density and crystallinity significantly. The observed field-effect mobilities (μeff) were among the best reported thus far: 0.47 and 1.25 cm2/Vs for the OTS-untreated and -pretreated devices, respectively. The device performance was found to be consistent with the estimated trap density and activation energy, which were derived from the transport characteristics for the temperature dependence of μeff in the range of 10-300 K.

Original languageEnglish
Pages (from-to)432-438
Number of pages7
JournalOrganic Electronics: physics, materials, applications
Issue number4
Publication statusPublished - 2008 Aug 1



  • Neutral cluster beam deposition (NCBD)
  • Octadecyltrichlorosilane (OTS)
  • Organic thin-film transistor
  • Pentacene
  • Temperature dependence of field-effect mobility (μ)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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