TY - JOUR
T1 - Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm2/Vs
AU - Seo, Hoon Seok
AU - Jang, Young Se
AU - Zhang, Ying
AU - Syed Abthagir, P.
AU - Choi, Jong Ho
N1 - Funding Information:
H.-S. Seo is grateful for the Seoul Science Fellowship. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program funded by the Ministry of Science and Technology (No. M10500000023-06J0000-02310).
PY - 2008/8
Y1 - 2008/8
N2 - Pentacene-based transistors produced by a novel neutral cluster beam deposition method were characterized, and the effects of the surface pretreatments were examined. Atomic force microscopy and X-ray diffraction showed that the cluster beams were quite efficient in growing high-quality, crystalline thin films on SiO2 substrates at room-temperature without any thermal post-treatment, and that an amphiphilic surfactant, octadecyltrichlorosilane (OTS), enhances the packing density and crystallinity significantly. The observed field-effect mobilities (μeff) were among the best reported thus far: 0.47 and 1.25 cm2/Vs for the OTS-untreated and -pretreated devices, respectively. The device performance was found to be consistent with the estimated trap density and activation energy, which were derived from the transport characteristics for the temperature dependence of μeff in the range of 10-300 K.
AB - Pentacene-based transistors produced by a novel neutral cluster beam deposition method were characterized, and the effects of the surface pretreatments were examined. Atomic force microscopy and X-ray diffraction showed that the cluster beams were quite efficient in growing high-quality, crystalline thin films on SiO2 substrates at room-temperature without any thermal post-treatment, and that an amphiphilic surfactant, octadecyltrichlorosilane (OTS), enhances the packing density and crystallinity significantly. The observed field-effect mobilities (μeff) were among the best reported thus far: 0.47 and 1.25 cm2/Vs for the OTS-untreated and -pretreated devices, respectively. The device performance was found to be consistent with the estimated trap density and activation energy, which were derived from the transport characteristics for the temperature dependence of μeff in the range of 10-300 K.
KW - Neutral cluster beam deposition (NCBD)
KW - Octadecyltrichlorosilane (OTS)
KW - Organic thin-film transistor
KW - Pentacene
KW - Temperature dependence of field-effect mobility (μ)
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U2 - 10.1016/j.orgel.2008.01.008
DO - 10.1016/j.orgel.2008.01.008
M3 - Article
AN - SCOPUS:44149088078
VL - 9
SP - 432
EP - 438
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 4
ER -