Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors

Kihyun Keem, Dong Young Jeong, Sangsig Kim, Moon Sook Lee, In Seok Yeo, U. In Chung, Joo Tae Moon

Research output: Contribution to journalArticle

145 Citations (Scopus)

Abstract

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires were successfully fabricated in this study using photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO nanowires with diameters of about 110 nm are coated with Al 2O3 using atomic layer deposition, which surrounds the channels and acts as a gate dielectric. About 80% of the surfaces of the nanowires coated with Al2O3 are covered with the gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 30.2 cm2/ (V s), a peak transconductance of 0.4 μS (Vg = -2.2 V), and an /on//off ratio of 107. To the best of our knowledge, the value of the / on//offratio obtained from this OSG FET is higher than that of any of the previously reported nanowire-based FETs. Its mobility, peak transconductance, and /on//off ratio are remarkably enhanced by 3.5, 32, and 106 times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

Original languageEnglish
Pages (from-to)1454-1458
Number of pages5
JournalNano Letters
Volume6
Issue number7
DOIs
Publication statusPublished - 2006 Jul 1

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Gates (transistor)
Field effect transistors
Nanowires
nanowires
field effect transistors
Fabrication
fabrication
Transconductance
transconductance
Atomic layer deposition
Gate dielectrics
atomic layer epitaxy
Metals

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Keem, K., Jeong, D. Y., Kim, S., Lee, M. S., Yeo, I. S., Chung, U. I., & Moon, J. T. (2006). Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors. Nano Letters, 6(7), 1454-1458. https://doi.org/10.1021/nl060708x

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors. / Keem, Kihyun; Jeong, Dong Young; Kim, Sangsig; Lee, Moon Sook; Yeo, In Seok; Chung, U. In; Moon, Joo Tae.

In: Nano Letters, Vol. 6, No. 7, 01.07.2006, p. 1454-1458.

Research output: Contribution to journalArticle

Keem, K, Jeong, DY, Kim, S, Lee, MS, Yeo, IS, Chung, UI & Moon, JT 2006, 'Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors', Nano Letters, vol. 6, no. 7, pp. 1454-1458. https://doi.org/10.1021/nl060708x
Keem, Kihyun ; Jeong, Dong Young ; Kim, Sangsig ; Lee, Moon Sook ; Yeo, In Seok ; Chung, U. In ; Moon, Joo Tae. / Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors. In: Nano Letters. 2006 ; Vol. 6, No. 7. pp. 1454-1458.
@article{84b6d6b12bbe49f081e3d09489d33a0f,
title = "Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors",
abstract = "Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires were successfully fabricated in this study using photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO nanowires with diameters of about 110 nm are coated with Al 2O3 using atomic layer deposition, which surrounds the channels and acts as a gate dielectric. About 80{\%} of the surfaces of the nanowires coated with Al2O3 are covered with the gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 30.2 cm2/ (V s), a peak transconductance of 0.4 μS (Vg = -2.2 V), and an /on//off ratio of 107. To the best of our knowledge, the value of the / on//offratio obtained from this OSG FET is higher than that of any of the previously reported nanowire-based FETs. Its mobility, peak transconductance, and /on//off ratio are remarkably enhanced by 3.5, 32, and 106 times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.",
author = "Kihyun Keem and Jeong, {Dong Young} and Sangsig Kim and Lee, {Moon Sook} and Yeo, {In Seok} and Chung, {U. In} and Moon, {Joo Tae}",
year = "2006",
month = "7",
day = "1",
doi = "10.1021/nl060708x",
language = "English",
volume = "6",
pages = "1454--1458",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors

AU - Keem, Kihyun

AU - Jeong, Dong Young

AU - Kim, Sangsig

AU - Lee, Moon Sook

AU - Yeo, In Seok

AU - Chung, U. In

AU - Moon, Joo Tae

PY - 2006/7/1

Y1 - 2006/7/1

N2 - Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires were successfully fabricated in this study using photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO nanowires with diameters of about 110 nm are coated with Al 2O3 using atomic layer deposition, which surrounds the channels and acts as a gate dielectric. About 80% of the surfaces of the nanowires coated with Al2O3 are covered with the gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 30.2 cm2/ (V s), a peak transconductance of 0.4 μS (Vg = -2.2 V), and an /on//off ratio of 107. To the best of our knowledge, the value of the / on//offratio obtained from this OSG FET is higher than that of any of the previously reported nanowire-based FETs. Its mobility, peak transconductance, and /on//off ratio are remarkably enhanced by 3.5, 32, and 106 times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

AB - Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires were successfully fabricated in this study using photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO nanowires with diameters of about 110 nm are coated with Al 2O3 using atomic layer deposition, which surrounds the channels and acts as a gate dielectric. About 80% of the surfaces of the nanowires coated with Al2O3 are covered with the gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 30.2 cm2/ (V s), a peak transconductance of 0.4 μS (Vg = -2.2 V), and an /on//off ratio of 107. To the best of our knowledge, the value of the / on//offratio obtained from this OSG FET is higher than that of any of the previously reported nanowire-based FETs. Its mobility, peak transconductance, and /on//off ratio are remarkably enhanced by 3.5, 32, and 106 times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

UR - http://www.scopus.com/inward/record.url?scp=33746864879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746864879&partnerID=8YFLogxK

U2 - 10.1021/nl060708x

DO - 10.1021/nl060708x

M3 - Article

C2 - 16834428

AN - SCOPUS:33746864879

VL - 6

SP - 1454

EP - 1458

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 7

ER -