Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors

Hyeong Jin Kim, Chul-Ho Lee, Dong Wook Kim, Gyu Chul Yi

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Abstract

We fabricated dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors (MOSFETs) where a Si substrate with a 200nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100nm thick SiO 2 layer was used as a top-gate. From current-voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (105-10 7) was at least one order of magnitude larger than that of the bottom-gate mode (104-106). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34νSνm-1 for the bottom-gate to 2.4νSνm-1 for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.

Original languageEnglish
JournalNanotechnology
Volume17
Issue number11
DOIs
Publication statusPublished - 2006 May 19
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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