Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors

Hyeong Jin Kim, Chul-Ho Lee, Dong Wook Kim, Gyu Chul Yi

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

We fabricated dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors (MOSFETs) where a Si substrate with a 200nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100nm thick SiO 2 layer was used as a top-gate. From current-voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (105-10 7) was at least one order of magnitude larger than that of the bottom-gate mode (104-106). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34νSνm-1 for the bottom-gate to 2.4νSνm-1 for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.

Original languageEnglish
JournalNanotechnology
Volume17
Issue number11
DOIs
Publication statusPublished - 2006 May 19
Externally publishedYes

Fingerprint

Nanotubes
Semiconductors
MOSFET devices
Nanorods
metal oxide semiconductors
Oxides
nanorods
field effect transistors
Metals
Fabrication
Equipment and Supplies
fabrication
Transconductance
Current voltage characteristics
Electrodes
Transistors
Switches
Geometry
Substrates
transconductance

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors. / Kim, Hyeong Jin; Lee, Chul-Ho; Kim, Dong Wook; Yi, Gyu Chul.

In: Nanotechnology, Vol. 17, No. 11, 19.05.2006.

Research output: Contribution to journalArticle

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