Abstract
We fabricated organic thin film transistors (OTFTs) by using soluble π-conjugated dendrimers of 4(HPBT)-benzene, 4(HPTT)-benzene, and 4(HPDTT)-benzene. Electrical characteristics such as current-voltage characteristic curves and their temperature dependence were measured for the dendrimer-based OTFT devices. The active layer using planar π-conjugated dendrimers was spin-coated, and thermally grown silicon dioxide layer was used as a dielectric layer. Through the measurements of source-drain currents with varying gate voltages, we obtained charge carrier mobility (μ), on/off current ratio (Ion/off), and threshold voltage (Vth). The 4(HPBT)-benzene and 4(HPTT)-benzene-based OTFT devices showed that the μ's were ∼6.2 × 10-3 cm2/V s and ∼1.9 × 10-3 cm2/V s, respectively. We measured temperature-dependent mobility and activation energy (Ea) of the dendrimer-based OTFTs by using Arrhenius fitting. The Ea's of 4(HPTT)-benzene and 4(HPDTT)-benzene-based OTFTs were estimated to be ∼0.39 eV and ∼0.13 eV, respectively. In case of 4(HPBT)-benzene-based OTFT, two trap levels were measured and the Ea's were estimated to be ∼0.027 eV and ∼0.22 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 431-434 |
| Number of pages | 4 |
| Journal | Colloids and Surfaces A: Physicochemical and Engineering Aspects |
| Volume | 313-314 |
| DOIs | |
| Publication status | Published - 2008 Feb 1 |
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Keywords
- Dendrimer
- Mobility
- Organic thin film transistor
ASJC Scopus subject areas
- Colloid and Surface Chemistry
- Physical and Theoretical Chemistry
Cite this
Fabrication and electrical characteristics of organic thin film transistor using π-conjugated dendrimer. / Cho, Mi Yeon; Kang, Han Saem; Kim, Kihyun; Kim, Su Jin; Joo, Jinsoo; Kim, Kyung Hwan; Cho, Min Ju; Choi, Dong Hoon.
In: Colloids and Surfaces A: Physicochemical and Engineering Aspects, Vol. 313-314, 01.02.2008, p. 431-434.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and electrical characteristics of organic thin film transistor using π-conjugated dendrimer
AU - Cho, Mi Yeon
AU - Kang, Han Saem
AU - Kim, Kihyun
AU - Kim, Su Jin
AU - Joo, Jinsoo
AU - Kim, Kyung Hwan
AU - Cho, Min Ju
AU - Choi, Dong Hoon
PY - 2008/2/1
Y1 - 2008/2/1
N2 - We fabricated organic thin film transistors (OTFTs) by using soluble π-conjugated dendrimers of 4(HPBT)-benzene, 4(HPTT)-benzene, and 4(HPDTT)-benzene. Electrical characteristics such as current-voltage characteristic curves and their temperature dependence were measured for the dendrimer-based OTFT devices. The active layer using planar π-conjugated dendrimers was spin-coated, and thermally grown silicon dioxide layer was used as a dielectric layer. Through the measurements of source-drain currents with varying gate voltages, we obtained charge carrier mobility (μ), on/off current ratio (Ion/off), and threshold voltage (Vth). The 4(HPBT)-benzene and 4(HPTT)-benzene-based OTFT devices showed that the μ's were ∼6.2 × 10-3 cm2/V s and ∼1.9 × 10-3 cm2/V s, respectively. We measured temperature-dependent mobility and activation energy (Ea) of the dendrimer-based OTFTs by using Arrhenius fitting. The Ea's of 4(HPTT)-benzene and 4(HPDTT)-benzene-based OTFTs were estimated to be ∼0.39 eV and ∼0.13 eV, respectively. In case of 4(HPBT)-benzene-based OTFT, two trap levels were measured and the Ea's were estimated to be ∼0.027 eV and ∼0.22 eV.
AB - We fabricated organic thin film transistors (OTFTs) by using soluble π-conjugated dendrimers of 4(HPBT)-benzene, 4(HPTT)-benzene, and 4(HPDTT)-benzene. Electrical characteristics such as current-voltage characteristic curves and their temperature dependence were measured for the dendrimer-based OTFT devices. The active layer using planar π-conjugated dendrimers was spin-coated, and thermally grown silicon dioxide layer was used as a dielectric layer. Through the measurements of source-drain currents with varying gate voltages, we obtained charge carrier mobility (μ), on/off current ratio (Ion/off), and threshold voltage (Vth). The 4(HPBT)-benzene and 4(HPTT)-benzene-based OTFT devices showed that the μ's were ∼6.2 × 10-3 cm2/V s and ∼1.9 × 10-3 cm2/V s, respectively. We measured temperature-dependent mobility and activation energy (Ea) of the dendrimer-based OTFTs by using Arrhenius fitting. The Ea's of 4(HPTT)-benzene and 4(HPDTT)-benzene-based OTFTs were estimated to be ∼0.39 eV and ∼0.13 eV, respectively. In case of 4(HPBT)-benzene-based OTFT, two trap levels were measured and the Ea's were estimated to be ∼0.027 eV and ∼0.22 eV.
KW - Dendrimer
KW - Mobility
KW - Organic thin film transistor
UR - http://www.scopus.com/inward/record.url?scp=37349010304&partnerID=8YFLogxK
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U2 - 10.1016/j.colsurfa.2007.05.063
DO - 10.1016/j.colsurfa.2007.05.063
M3 - Article
VL - 313-314
SP - 431
EP - 434
JO - Colloids and Surfaces A: Physicochemical and Engineering Aspects
JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects
SN - 0927-7757
ER -