Fabrication and electrical characteristics of organic thin film transistor using π-conjugated dendrimer

Mi Yeon Cho, Han Saem Kang, Kihyun Kim, Su Jin Kim, Jinsoo Joo, Kyung Hwan Kim, Min Ju Cho, Dong Hoon Choi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We fabricated organic thin film transistors (OTFTs) by using soluble π-conjugated dendrimers of 4(HPBT)-benzene, 4(HPTT)-benzene, and 4(HPDTT)-benzene. Electrical characteristics such as current-voltage characteristic curves and their temperature dependence were measured for the dendrimer-based OTFT devices. The active layer using planar π-conjugated dendrimers was spin-coated, and thermally grown silicon dioxide layer was used as a dielectric layer. Through the measurements of source-drain currents with varying gate voltages, we obtained charge carrier mobility (μ), on/off current ratio (Ion/off), and threshold voltage (Vth). The 4(HPBT)-benzene and 4(HPTT)-benzene-based OTFT devices showed that the μ's were ∼6.2 × 10-3 cm2/V s and ∼1.9 × 10-3 cm2/V s, respectively. We measured temperature-dependent mobility and activation energy (Ea) of the dendrimer-based OTFTs by using Arrhenius fitting. The Ea's of 4(HPTT)-benzene and 4(HPDTT)-benzene-based OTFTs were estimated to be ∼0.39 eV and ∼0.13 eV, respectively. In case of 4(HPBT)-benzene-based OTFT, two trap levels were measured and the Ea's were estimated to be ∼0.027 eV and ∼0.22 eV.

Original languageEnglish
Pages (from-to)431-434
Number of pages4
JournalColloids and Surfaces A: Physicochemical and Engineering Aspects
Volume313-314
DOIs
Publication statusPublished - 2008 Feb 1

Keywords

  • Dendrimer
  • Mobility
  • Organic thin film transistor

ASJC Scopus subject areas

  • Surfaces and Interfaces
  • Physical and Theoretical Chemistry
  • Colloid and Surface Chemistry

Fingerprint Dive into the research topics of 'Fabrication and electrical characteristics of organic thin film transistor using π-conjugated dendrimer'. Together they form a unique fingerprint.

Cite this