Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, C. K. Hyon, Jung ho Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Kim Yong, E. K. Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

Original languageEnglish
Pages (from-to)1167-1169
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number8
Publication statusPublished - 1999 Aug 23

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jung, S. K., Hyon, C. K., Park, J. H., Hwang, S. W., Ahn, D., Son, M. H., Min, B. D., Yong, K., & Kim, E. K. (1999). Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots. Applied Physics Letters, 75(8), 1167-1169.