Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1999 Aug 23|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)