Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, C. K. Hyon, Jung ho Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Kim Yong, E. K. Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

Original languageEnglish
Pages (from-to)1167-1169
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number8
Publication statusPublished - 1999 Aug 23

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resonant tunneling
quantum dots
fabrication
wafers
electrodes
electric potential
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots. / Jung, S. K.; Hyon, C. K.; Park, Jung ho; Hwang, S. W.; Ahn, D.; Son, M. H.; Min, B. D.; Yong, Kim; Kim, E. K.

In: Applied Physics Letters, Vol. 75, No. 8, 23.08.1999, p. 1167-1169.

Research output: Contribution to journalArticle

Jung, SK, Hyon, CK, Park, JH, Hwang, SW, Ahn, D, Son, MH, Min, BD, Yong, K & Kim, EK 1999, 'Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots', Applied Physics Letters, vol. 75, no. 8, pp. 1167-1169.
Jung, S. K. ; Hyon, C. K. ; Park, Jung ho ; Hwang, S. W. ; Ahn, D. ; Son, M. H. ; Min, B. D. ; Yong, Kim ; Kim, E. K. / Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots. In: Applied Physics Letters. 1999 ; Vol. 75, No. 8. pp. 1167-1169.
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