Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, S. H. Song, S. W. Hwang, Jung ho Park, Yong Kim, E. K. Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

Original languageEnglish
Pages (from-to)18-20
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - 1999 Dec 1

Fingerprint

Resonant tunneling
resonant tunneling
Semiconductor quantum dots
quantum dots
Fabrication
fabrication
Current voltage characteristics
Aluminum
aluminum
Electrodes
electrodes
electric potential
indium arsenide
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots. / Jung, S. K.; Song, S. H.; Hwang, S. W.; Park, Jung ho; Kim, Yong; Kim, E. K.

In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 18-20.

Research output: Contribution to journalArticle

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