Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, S. H. Song, S. W. Hwang, J. H. Park, Yong Kim, E. K. Kim

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot.

Original languageEnglish
Pages (from-to)18-20
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 1999 Jul 191999 Jul 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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