Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

M. Seo, H. Kim, Y. H. Kim, J. Na, B. J. Lee, J. J. Kim, I. Lee, H. Yun, K. McAllister, K. S. Kim, G. H. Jeong, Gyu-Tae Kim, S. W. Lee

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3 Citations (Scopus)

Abstract

A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

Original languageEnglish
Article number033103
JournalApplied Physics Letters
Volume107
Issue number3
DOIs
Publication statusPublished - 2015 Jul 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Seo, M., Kim, H., Kim, Y. H., Na, J., Lee, B. J., Kim, J. J., Lee, I., Yun, H., McAllister, K., Kim, K. S., Jeong, G. H., Kim, G-T., & Lee, S. W. (2015). Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays. Applied Physics Letters, 107(3), [033103]. https://doi.org/10.1063/1.4927054