Fabrication and estimation of characteristics for Nb-silicide FEAs

Jae Seok Park, Sanjo Lee, Byeong Kwon Ju, Jin Jang, D. Jeon, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

Original languageEnglish
Title of host publicationProceedings of the 5th Asian Symposium on Information Display, ASID 1999
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-52
Number of pages4
ISBN (Electronic)9579734798, 9789579734790
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes
Event5th Asian Symposium on Information Display, ASID 1999 - Hsinchu, Taiwan, Province of China
Duration: 1999 Mar 171999 Mar 19

Other

Other5th Asian Symposium on Information Display, ASID 1999
CountryTaiwan, Province of China
CityHsinchu
Period99/3/1799/3/19

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Keywords

  • Field Emission Arrays(FEAs)
  • Nb(Niobium)-Silicide.
  • Silicon-Tip

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Media Technology

Cite this

Park, J. S., Lee, S., Ju, B. K., Jang, J., Jeon, D., & Oh, M. H. (1999). Fabrication and estimation of characteristics for Nb-silicide FEAs. In Proceedings of the 5th Asian Symposium on Information Display, ASID 1999 (pp. 49-52). [762711] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASID.1999.762711