Fabrication and estimation of characteristics for Nb-silicide FEAs

Jae Seok Park, Sanjo Lee, Byeong Kwon Ju, Jin Jang, D. Jeon, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Electron emission currents and stability in the silicon-Tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-Tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

Original languageEnglish
Title of host publicationProceedings of the 5th Asian Symposium on Information Display, ASID 1999
EditorsHan-Ping D. Shieh, I-Wei Wu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-52
Number of pages4
ISBN (Electronic)9579734798, 9789579734790
DOIs
Publication statusPublished - 1999
Externally publishedYes
Event5th Asian Symposium on Information Display, ASID 1999 - Hsinchu, Taiwan, Province of China
Duration: 1999 Mar 171999 Mar 19

Publication series

NameProceedings of the 5th Asian Symposium on Information Display, ASID 1999

Other

Other5th Asian Symposium on Information Display, ASID 1999
CountryTaiwan, Province of China
CityHsinchu
Period99/3/1799/3/19

Keywords

  • Field Emission Arrays(FEAs)
  • Nb(Niobium)-Silicide.
  • Silicon-Tip

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Media Technology

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  • Cite this

    Park, J. S., Lee, S., Ju, B. K., Jang, J., Jeon, D., & Oh, M. H. (1999). Fabrication and estimation of characteristics for Nb-silicide FEAs. In H-P. D. Shieh, & I-W. Wu (Eds.), Proceedings of the 5th Asian Symposium on Information Display, ASID 1999 (pp. 49-52). [762711] (Proceedings of the 5th Asian Symposium on Information Display, ASID 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASID.1999.762711