Fabrication and evaluation of nanopillar-shaped phase-change memory devices

Sung Hoon Hong, Ju Hyeon Shin, Byeong Ju Bae, Heon Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, nanopillar-shaped phase-change memory devices of various sizes were simply fabricated by nanosphere lithography, and their electrical characteristics were evaluated by conductive atomic force microscopy (AFM). As nanosphere materials, 180-nm diameter polystyrene balls were used for a size-controllable mask, silica balls with a diameter of 200nm for a high etching-resistance mask, and sub-50nm Ag nanoparticles were used for sub-50-nm-scale fabrication. Using the polystyrene balls, silica balls, and Ag nanoparticles, nanopillar-shaped phasechange memory devices with various diameters, heights as large as 1 μm, and sizes as small as less than 50nm were successfully fabricated. The electrical properties of the nanopillar-shaped Ge2Sb2Te5 devices were evaluated by conductive AFM with an electrical measurement system.

Original languageEnglish
Article number036501
JournalJapanese Journal of Applied Physics
Volume50
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Phase change memory
Nanospheres
balls
Masks
Atomic force microscopy
Polystyrenes
Silica
Nanoparticles
Data storage equipment
Fabrication
fabrication
evaluation
Lithography
Etching
polystyrene
Electric properties
masks
atomic force microscopy
silicon dioxide
nanoparticles

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication and evaluation of nanopillar-shaped phase-change memory devices. / Hong, Sung Hoon; Shin, Ju Hyeon; Bae, Byeong Ju; Lee, Heon.

In: Japanese Journal of Applied Physics, Vol. 50, No. 3, 036501, 01.03.2011.

Research output: Contribution to journalArticle

Hong, Sung Hoon ; Shin, Ju Hyeon ; Bae, Byeong Ju ; Lee, Heon. / Fabrication and evaluation of nanopillar-shaped phase-change memory devices. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 3.
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