Fabrication and Experimental Results of Lateral Trench Electrode IGBT

Ey Goo Kang, Dae Won Kim, Man Young Sung

Research output: Contribution to journalArticle

Abstract

A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
Volume3
Issue number3-4
Publication statusPublished - 2002 Dec 1

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electrode
Lateral
Fabrication
bipolar transistors
Electrodes
fabrication
electrodes
Experimental Results
Voltage
latch-up
Electric breakdown
electrical faults
Breakdown
Current density
Entire
current density
Electric potential
electric potential

Keywords

  • Forward blocking voltage
  • Latch-up
  • Trench Electrode

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Computational Mechanics
  • Mechanics of Materials
  • Applied Mathematics
  • Modelling and Simulation
  • Physics and Astronomy(all)
  • Statistical and Nonlinear Physics

Cite this

Fabrication and Experimental Results of Lateral Trench Electrode IGBT. / Kang, Ey Goo; Kim, Dae Won; Sung, Man Young.

In: International Journal of Nonlinear Sciences and Numerical Simulation, Vol. 3, No. 3-4, 01.12.2002, p. 405-409.

Research output: Contribution to journalArticle

@article{aed2fc3c49594cd2a359491b0801759c,
title = "Fabrication and Experimental Results of Lateral Trench Electrode IGBT",
abstract = "A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.",
keywords = "Forward blocking voltage, Latch-up, Trench Electrode",
author = "Kang, {Ey Goo} and Kim, {Dae Won} and Sung, {Man Young}",
year = "2002",
month = "12",
day = "1",
language = "English",
volume = "3",
pages = "405--409",
journal = "International Journal of Nonlinear Sciences and Numerical Simulation",
issn = "1565-1339",
publisher = "Walter de Gruyter GmbH & Co. KG",
number = "3-4",

}

TY - JOUR

T1 - Fabrication and Experimental Results of Lateral Trench Electrode IGBT

AU - Kang, Ey Goo

AU - Kim, Dae Won

AU - Sung, Man Young

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

AB - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT are 120A/cm2, 540A/cm2 and 1230A/cm2, respectively. The maximum currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively.

KW - Forward blocking voltage

KW - Latch-up

KW - Trench Electrode

UR - http://www.scopus.com/inward/record.url?scp=0347305830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347305830&partnerID=8YFLogxK

M3 - Article

VL - 3

SP - 405

EP - 409

JO - International Journal of Nonlinear Sciences and Numerical Simulation

JF - International Journal of Nonlinear Sciences and Numerical Simulation

SN - 1565-1339

IS - 3-4

ER -