Fabrication and field emission study of gated diamondlike-carbon-coated silicon tips

Sanjo Lee, Byeong Kwon Ju, Yun-Hi Lee, D. Jeon, Myung Hwan Oh

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We have fabricated a gated silicon field emitter array for which the silicon tips are coated with a diamondlike-carbon film (DLC). Silicon oxide disks were patterned on the silicon substrate, and the tips were formed using conventional dry etching. With the oxide caps covering the tips, the insulating layer, molybdenum gate film, and aluminum parting layer were deposited. At this stage the oxide caps were removed to expose the silicon tips and a DLC-carbon film was deposited onto the tips.

Original languageEnglish
Pages (from-to)425-427
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number2
Publication statusPublished - 1997 Mar 1
Externally publishedYes

Fingerprint

Field emission
field emission
Carbon films
Fabrication
Silicon
fabrication
Carbon
carbon
silicon
caps
Oxides
Dry etching
Silicon oxides
oxides
Molybdenum
silicon oxides
molybdenum
Aluminum
emitters
coverings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Fabrication and field emission study of gated diamondlike-carbon-coated silicon tips. / Lee, Sanjo; Ju, Byeong Kwon; Lee, Yun-Hi; Jeon, D.; Oh, Myung Hwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 01.03.1997, p. 425-427.

Research output: Contribution to journalArticle

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