Fabrication and field emission study of gated DLC-coated silicon tips

Sanjo Lee, Chang Gi Ko, Byeong Kwon Ju, Yun-Hi Lee, D. Jeon, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages193-196
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

field emission
diamonds
fabrication
carbon
silicon
emitters
hysteresis
vacuum chambers
plots
vapor deposition
cycles
electric potential

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Lee, S., Ko, C. G., Ju, B. K., Lee, Y-H., Jeon, D., & Oh, M. H. (1996). Fabrication and field emission study of gated DLC-coated silicon tips. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 193-196). Piscataway, NJ, United States: IEEE.

Fabrication and field emission study of gated DLC-coated silicon tips. / Lee, Sanjo; Ko, Chang Gi; Ju, Byeong Kwon; Lee, Yun-Hi; Jeon, D.; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 193-196.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, S, Ko, CG, Ju, BK, Lee, Y-H, Jeon, D & Oh, MH 1996, Fabrication and field emission study of gated DLC-coated silicon tips. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 193-196, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Lee S, Ko CG, Ju BK, Lee Y-H, Jeon D, Oh MH. Fabrication and field emission study of gated DLC-coated silicon tips. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 193-196
Lee, Sanjo ; Ko, Chang Gi ; Ju, Byeong Kwon ; Lee, Yun-Hi ; Jeon, D. ; Oh, Myung Hwan. / Fabrication and field emission study of gated DLC-coated silicon tips. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 193-196
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