Fabrication and field emission study of gated DLC-coated silicon tips

Sanjo Lee, Chang Gi Ko, Byeong Kwon Ju, Yun Hi Lee, D. Jeon, Myung Hwan Oh

Research output: Contribution to conferencePaper

Abstract

Silicon field emission tips were coated with diamond-like-carbon (DLC) films using plasma enhanced chemical vapor deposition (PECVD) to improve its material properties for field emitter applications. The current-voltage characteristics were measured in a vacuum chamber. A Fowler-Nordheim plot was used to further evaluate the gated DLC-coated silicon field emitters indicating that the current measured is due to the field emissions. The hysteresis of the emission current was tested by cycling the gate bias where a noticeable hysteresis was not recognized. Fluctuations of the emission current were plotted, showing that the fluctuation is bigger for the higher gate bias.

Original languageEnglish
Pages193-196
Number of pages4
Publication statusPublished - 1996
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

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    Lee, S., Ko, C. G., Ju, B. K., Lee, Y. H., Jeon, D., & Oh, M. H. (1996). Fabrication and field emission study of gated DLC-coated silicon tips. 193-196. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .