Fabrication and its response characteristics of MELO accelerometer

James Jungho Pak, Seung H. Yi, Young K. Sung, Gerold W. Neudeck

Research output: Contribution to conferencePaper

Abstract

This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged lateral epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting of a local silicon-on-insulator (SOI) structure, resulting in a high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30g.

Original languageEnglish
Pages32-35
Number of pages4
Publication statusPublished - 1995
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 1995 Nov 61995 Nov 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CityHong Kong, Hong Kong
Period95/11/695/11/10

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication and its response characteristics of MELO accelerometer'. Together they form a unique fingerprint.

  • Cite this

    Pak, J. J., Yi, S. H., Sung, Y. K., & Neudeck, G. W. (1995). Fabrication and its response characteristics of MELO accelerometer. 32-35. Paper presented at Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .