Fabrication and radio frequency characterization of carbon nanotube field effect transistor: Evidence of quantum capacitance

D. H. Hwang, M. G. Kang, Tae Geun Kim, J. S. Hwang, D. W. Kim, D. Whang, S. W. Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We fabricated an radio frequency (RF) carbon nanotube field effect transistor (CNTFET) whose electrode shapes were standard RF designed ground-signal-ground (GSG)-type pads. The S-parameters measured from our RF CNTFET in the frequency range up to 6 GHz were fitted with an RF equivalent circuit, and the extracted gate capacitance was shown to be the capacitance value of the series combination of the electrostatic capacitance and the quantum capacitance. The effect of the channel resistance and the kinetic inductance was also discussed.

Original languageEnglish
Pages (from-to)7222-7225
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

Keywords

  • Carbon nanotube
  • Field-effect transistor
  • Microwave
  • Quantum capacitance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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