Fabrication and RF characterization of a single nickel silicide nanowire for an interconnect

Dongjin Lee, Myunggil Kang, Suheon Hong, Donghoon Hwang, Keun Heo, Won Jae Joo, Sangsig Kim, Dongmok Whang, Sung Woo Hwang

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Abstract

We fabricated a nickel silicide nanowire (NiSi NW) device with a low thermal budget and characterized it by measuring the S-parameters in the radio-frequency (RF) regime. A single silicon nanowire (Si NW) was assembled on a substrate with a two-port coplanar waveguide structure using the dielectrophoresis method. Then, the Si NW on the device was perfectly transformed into a NiSi NW. The NiSi NW device was characterized by performing measurements in the DC and RF regimes. The transformation into the NiSi NW resulted in reducing about three-order more the resistance than before the transformation. Hence, the transmission of the NiSi NW device was 25 dB higher than that of the Si NW device up to gigahertz. We also discussed extracting the intrinsic properties of the NiSi NW by using de-embedding, circuit modeling, and simulation.

Original languageEnglish
Pages (from-to)6222-6225
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

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Keywords

  • Coplanar waveguide
  • Interconnect
  • Nickel silicide
  • Radio frequency

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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