AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-μm pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about 4-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.
- Distributed feedback (DFB) lasers
- Semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering