Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties

Won Woo Chung, Gang Yeol Yoo, Hoo Keun Park, Woong Kim, Young Rag Do

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to reduce the residual strain in multiple quantum wells (MQWs) with an InGaN/GaN heterostructure and enhance the light extraction efficiency of a gallium-nitride-based LED simultaneously, we fabricated a highly periodic multiple quantum well (MQW) nanorod array with an InGaN/GaN heterostructure capable of reducing the residual strain inside the GaN lattice and acting as a two-dimensional (2D) photonic crystal (PC) using polystyrene (PS) nanosphere lithography (NSL) followed by a reactive ion etching (RIE) process and an inductively coupled plasma-reactive ion etching (ICP-RIE) process. Each individual InGaN/GaN nanorod has a tapered shape from bottom to top with dimensions of 2 ∼ 2.5 μm (length) and 400 ∼ 600nm (diameter). Structural and morphological measurements were undertaken using a field-emission scanning electron microscope (FE-SEM), and the optical properties were measured by scanning-electron-microscope cathodoluminescence (SEM-CL) and photoluminescence (PL) instruments. The proposed InGaN/GaN MQW nanorod array demonstrated higher MQW intensity levels compared to non-processed bare GaN wafer in both the PL and the CL spectra due to the relaxation of residual strain and the increment of the extraction efficiency through the highly periodic 2D photonic crystal structure.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages216-219
Number of pages4
ISBN (Print)9781467381550
DOIs
Publication statusPublished - 2016 Jan 20
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15/7/2715/7/30

Keywords

  • Cathodoluminescence
  • InGaN/GaN
  • Nanofabrication
  • Nanophotonics
  • Nanorod
  • Nanosphere Lithography
  • Photoluminescence
  • Wafer Scale Fabrication

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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  • Cite this

    Chung, W. W., Yoo, G. Y., Park, H. K., Kim, W., & Do, Y. R. (2016). Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 216-219). [7388961] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388961