Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Junjie Kang; Hak Jong Choi; Fang Ren; Jinping Ao; Hongjian Li; Yi Li; Weichuan Du; Kun Zhou; Hao Tan; Daihong Huh; Panpan Li; Meng Liang; Songxin Gao; Chun Tang; Xiaoyan Yi; Heon Lee; Zhiqiang Liu

doi:10.7567/1347-4065/ab293e

Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Junjie Kang, Hak Jong Choi, Fang Ren, Jinping Ao, Hongjian Li, Yi Li, Weichuan Du, Kun Zhou, Hao Tan, Daihong Huh, Panpan Li, Meng Liang, Songxin Gao, Chun Tang, Xiaoyan Yi, Heon Lee, Zhiqiang Liu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dry etching with a high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measured optical spectrum showed this innovative structure provided low reflectance and high absorbance at the wavelength around the ultraviolet range. The photoelectrochemical properties indicated optimized tube height could efficiently enhance the water splitting efficiency by 15 times at 1.23 V versus RHE by increasing the surface reactive area and tuning the optical spectrum properties. The IPCE result also demonstrated a corresponding enhancement.

Original language	English
Article number	081001
Journal	Japanese journal of applied physics
Volume	58
Issue number	8
DOIs	https://doi.org/10.7567/1347-4065/ab293e
Publication status	Published - 2019

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Kang, J., Choi, H. J., Ren, F., Ao, J., Li, H., Li, Y., Du, W., Zhou, K., Tan, H., Huh, D., Li, P., Liang, M., Gao, S., Tang, C., Yi, X., Lee, H., & Liu, Z. (2019). Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting. Japanese journal of applied physics, 58(8), [081001]. https://doi.org/10.7567/1347-4065/ab293e

Kang, J, Choi, HJ, Ren, F, Ao, J, Li, H, Li, Y, Du, W, Zhou, K, Tan, H, Huh, D, Li, P, Liang, M, Gao, S, Tang, C, Yi, X, Lee, H & Liu, Z 2019, 'Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting', Japanese journal of applied physics, vol. 58, no. 8, 081001. https://doi.org/10.7567/1347-4065/ab293e

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title = "Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting",

abstract = "In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dry etching with a high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measured optical spectrum showed this innovative structure provided low reflectance and high absorbance at the wavelength around the ultraviolet range. The photoelectrochemical properties indicated optimized tube height could efficiently enhance the water splitting efficiency by 15 times at 1.23 V versus RHE by increasing the surface reactive area and tuning the optical spectrum properties. The IPCE result also demonstrated a corresponding enhancement.",

author = "Junjie Kang and Choi, {Hak Jong} and Fang Ren and Jinping Ao and Hongjian Li and Yi Li and Weichuan Du and Kun Zhou and Hao Tan and Daihong Huh and Panpan Li and Meng Liang and Songxin Gao and Chun Tang and Xiaoyan Yi and Heon Lee and Zhiqiang Liu",

note = "Funding Information: This work was supported by the National Key R&D Program of China, Grant No. 2017YFB0403300, 2017YFB0403302; Beijing Municipal Science and Technology Project, Z161100002116032; Guangzhou Science & Technology Project of Guangdong Province, China, 201704030106 and 2016201604030035; and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP), 2016R1A2B3015400; and the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning, NRF-2013M3C1A3063597. Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

year = "2019",

doi = "10.7567/1347-4065/ab293e",

language = "English",

volume = "58",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

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T1 - Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

AU - Kang, Junjie

AU - Choi, Hak Jong

AU - Ren, Fang

AU - Ao, Jinping

AU - Li, Hongjian

AU - Li, Yi

AU - Du, Weichuan

AU - Zhou, Kun

AU - Tan, Hao

AU - Huh, Daihong

AU - Li, Panpan

AU - Liang, Meng

AU - Gao, Songxin

AU - Tang, Chun

AU - Yi, Xiaoyan

AU - Lee, Heon

AU - Liu, Zhiqiang

N1 - Funding Information: This work was supported by the National Key R&D Program of China, Grant No. 2017YFB0403300, 2017YFB0403302; Beijing Municipal Science and Technology Project, Z161100002116032; Guangzhou Science & Technology Project of Guangdong Province, China, 201704030106 and 2016201604030035; and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP), 2016R1A2B3015400; and the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning, NRF-2013M3C1A3063597. Publisher Copyright: © 2019 The Japan Society of Applied Physics.

PY - 2019

Y1 - 2019

N2 - In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dry etching with a high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measured optical spectrum showed this innovative structure provided low reflectance and high absorbance at the wavelength around the ultraviolet range. The photoelectrochemical properties indicated optimized tube height could efficiently enhance the water splitting efficiency by 15 times at 1.23 V versus RHE by increasing the surface reactive area and tuning the optical spectrum properties. The IPCE result also demonstrated a corresponding enhancement.

AB - In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dry etching with a high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measured optical spectrum showed this innovative structure provided low reflectance and high absorbance at the wavelength around the ultraviolet range. The photoelectrochemical properties indicated optimized tube height could efficiently enhance the water splitting efficiency by 15 times at 1.23 V versus RHE by increasing the surface reactive area and tuning the optical spectrum properties. The IPCE result also demonstrated a corresponding enhancement.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Abstract

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