Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition

Sung Do Kwon, Byeong Kwon Ju, Seok Jin Yoon, Jin Sang Kim

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi 0.4Sb 1.6Te 3 and n-type Bi 2Te 3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.

Original languageEnglish
Pages (from-to)920-924
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

bismuth tellurides
Organic Chemicals
Organic chemicals
Bismuth
metalorganic chemical vapor deposition
Chemical vapor deposition
thermoelectric materials
Metals
Fabrication
Thin films
fabrication
thin films
Vapors
vapor phases
thermoelectric generators
Antimony
tellurides
antimony
metals
bismuth

Keywords

  • Bismuth telluride
  • Generator
  • MOCVD
  • Seebeck coefficient
  • Thermoelectric
  • Thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition. / Kwon, Sung Do; Ju, Byeong Kwon; Yoon, Seok Jin; Kim, Jin Sang.

In: Journal of Electronic Materials, Vol. 38, No. 7, 01.07.2009, p. 920-924.

Research output: Contribution to journalArticle

@article{e17a74ed56a74f599706baf150da189e,
title = "Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition",
abstract = "Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi 0.4Sb 1.6Te 3 and n-type Bi 2Te 3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.",
keywords = "Bismuth telluride, Generator, MOCVD, Seebeck coefficient, Thermoelectric, Thin film",
author = "Kwon, {Sung Do} and Ju, {Byeong Kwon} and Yoon, {Seok Jin} and Kim, {Jin Sang}",
year = "2009",
month = "7",
day = "1",
doi = "10.1007/s11664-009-0704-8",
language = "English",
volume = "38",
pages = "920--924",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "7",

}

TY - JOUR

T1 - Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition

AU - Kwon, Sung Do

AU - Ju, Byeong Kwon

AU - Yoon, Seok Jin

AU - Kim, Jin Sang

PY - 2009/7/1

Y1 - 2009/7/1

N2 - Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi 0.4Sb 1.6Te 3 and n-type Bi 2Te 3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.

AB - Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi 0.4Sb 1.6Te 3 and n-type Bi 2Te 3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.

KW - Bismuth telluride

KW - Generator

KW - MOCVD

KW - Seebeck coefficient

KW - Thermoelectric

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=67650484678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650484678&partnerID=8YFLogxK

U2 - 10.1007/s11664-009-0704-8

DO - 10.1007/s11664-009-0704-8

M3 - Article

AN - SCOPUS:67650484678

VL - 38

SP - 920

EP - 924

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 7

ER -