Fabrication of bismuth telluride-based alloy thin film thermoelectric devices grown by metal organic chemical vapor deposition

Sung Do Kwon, Byeong Kwon Ju, Seok Jin Yoon, Jin Sang Kim

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi 0.4Sb 1.6Te 3 and n-type Bi 2Te 3 thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 μW was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.

Original languageEnglish
Pages (from-to)920-924
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number7
DOIs
Publication statusPublished - 2009 Jul

Keywords

  • Bismuth telluride
  • Generator
  • MOCVD
  • Seebeck coefficient
  • Thermoelectric
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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