Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang, Dong Jin Byun, N. J. Ianno, P. A. Dowben, H. R. Kim

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

Original languageEnglish
Pages (from-to)1495-1497
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number11
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

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heterojunction devices
boron carbides
boron
fabrication
JFET
boranes
diodes
vapor deposition
aluminum
requirements
thin films
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hwang, S. D., Byun, D. J., Ianno, N. J., Dowben, P. A., & Kim, H. R. (1996). Fabrication of boron-carbide/boron heterojunction devices. Applied Physics Letters, 68(11), 1495-1497. https://doi.org/10.1063/1.116266

Fabrication of boron-carbide/boron heterojunction devices. / Hwang, Seong Don; Byun, Dong Jin; Ianno, N. J.; Dowben, P. A.; Kim, H. R.

In: Applied Physics Letters, Vol. 68, No. 11, 01.12.1996, p. 1495-1497.

Research output: Contribution to journalArticle

Hwang, SD, Byun, DJ, Ianno, NJ, Dowben, PA & Kim, HR 1996, 'Fabrication of boron-carbide/boron heterojunction devices', Applied Physics Letters, vol. 68, no. 11, pp. 1495-1497. https://doi.org/10.1063/1.116266
Hwang, Seong Don ; Byun, Dong Jin ; Ianno, N. J. ; Dowben, P. A. ; Kim, H. R. / Fabrication of boron-carbide/boron heterojunction devices. In: Applied Physics Letters. 1996 ; Vol. 68, No. 11. pp. 1495-1497.
@article{fde97fb9cf28466f823540d8f44912c4,
title = "Fabrication of boron-carbide/boron heterojunction devices",
abstract = "We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.",
author = "Hwang, {Seong Don} and Byun, {Dong Jin} and Ianno, {N. J.} and Dowben, {P. A.} and Kim, {H. R.}",
year = "1996",
month = "12",
day = "1",
doi = "10.1063/1.116266",
language = "English",
volume = "68",
pages = "1495--1497",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Fabrication of boron-carbide/boron heterojunction devices

AU - Hwang, Seong Don

AU - Byun, Dong Jin

AU - Ianno, N. J.

AU - Dowben, P. A.

AU - Kim, H. R.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

AB - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

UR - http://www.scopus.com/inward/record.url?scp=0000959729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000959729&partnerID=8YFLogxK

U2 - 10.1063/1.116266

DO - 10.1063/1.116266

M3 - Article

AN - SCOPUS:0000959729

VL - 68

SP - 1495

EP - 1497

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -