Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang, Dongjin Byun, N. J. Ianno, P. A. Dowben, H. R. Kim

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

Original languageEnglish
Pages (from-to)1495-1497
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number11
DOIs
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Fabrication of boron-carbide/boron heterojunction devices'. Together they form a unique fingerprint.

Cite this