Abstract
We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
Original language | English |
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Pages (from-to) | 1495-1497 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)