Abstract
We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
| Original language | English |
|---|---|
| Pages (from-to) | 1495-1497 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Hwang, S. D., Byun, D., Ianno, N. J., Dowben, P. A., & Kim, H. R. (1996). Fabrication of boron-carbide/boron heterojunction devices. Applied Physics Letters, 68(11), 1495-1497. https://doi.org/10.1063/1.116266