Abstract
We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
| Original language | English |
|---|---|
| Journal | Applied Physics Letters |
| Publication status | Published - 1995 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication of boron-carbide/boron heterojunction devices. / Hwang, Seong Don; Byun, Dong Jin; Ianno, N. J.; Dowben, P. A.; Kim, H. R.
In: Applied Physics Letters, 01.12.1995.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of boron-carbide/boron heterojunction devices
AU - Hwang, Seong Don
AU - Byun, Dong Jin
AU - Ianno, N. J.
AU - Dowben, P. A.
AU - Kim, H. R.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
AB - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
UR - http://www.scopus.com/inward/record.url?scp=36449003070&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36449003070&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:36449003070
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -