Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang; Dong Jin Byun; N. J. Ianno; P. A. Dowben; H. R. Kim

Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang, Dong Jin Byun, N. J. Ianno, P. A. Dowben, H. R. Kim

Research output: Contribution to journal › Article

Abstract

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B₅C) acts as a p-type material. Both boron and boron-carbide (B₅C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

Original language	English
Journal	Applied Physics Letters
Publication status	Published - 1995 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

Fingerprint Dive into the research topics of 'Fabrication of boron-carbide/boron heterojunction devices'. Together they form a unique fingerprint.

Cite this

Hwang, S. D., Byun, D. J., Ianno, N. J., Dowben, P. A., & Kim, H. R. (1995). Fabrication of boron-carbide/boron heterojunction devices. Applied Physics Letters.

@article{aa92310a4a8d492cba9e76ef269e4cbc,

title = "Fabrication of boron-carbide/boron heterojunction devices",

abstract = "We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.",

author = "Hwang, {Seong Don} and Byun, {Dong Jin} and Ianno, {N. J.} and Dowben, {P. A.} and Kim, {H. R.}",

year = "1995",

month = dec,

day = "1",

language = "English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Fabrication of boron-carbide/boron heterojunction devices

AU - Hwang, Seong Don

AU - Byun, Dong Jin

AU - Ianno, N. J.

AU - Dowben, P. A.

AU - Kim, H. R.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

AB - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

UR - http://www.scopus.com/inward/record.url?scp=36449003070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449003070&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449003070

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -