Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang; Dongjin Byun; N. J. Ianno; P. A. Dowben; H. R. Kim

doi:10.1063/1.116266

Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang, Dongjin Byun, N. J. Ianno, P. A. Dowben, H. R. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

Original language	English
Pages (from-to)	1495-1497
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	11
DOIs	https://doi.org/10.1063/1.116266
Publication status	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.",

author = "Hwang, {Seong Don} and Dongjin Byun and Ianno, {N. J.} and Dowben, {P. A.} and Kim, {H. R.}",

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AU - Hwang, Seong Don

AU - Byun, Dongjin

AU - Ianno, N. J.

AU - Dowben, P. A.

AU - Kim, H. R.

PY - 1996

Y1 - 1996

N2 - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

AB - We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

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Fabrication of boron-carbide/boron heterojunction devices

Abstract

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