Fabrication of boron-carbide/boron heterojunction devices

Seong Don Hwang, Dong Jin Byun, N. J. Ianno, P. A. Dowben, H. R. Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have succeeded in the fabrication of a boron-carbide/boron diode on an aluminum substrate, and a boron-carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron-carbide (B5C) acts as a p-type material. Both boron and boron-carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.

Original languageEnglish
JournalApplied Physics Letters
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

heterojunction devices
boron carbides
boron
fabrication
JFET
boranes
diodes
vapor deposition
aluminum
requirements
thin films
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hwang, S. D., Byun, D. J., Ianno, N. J., Dowben, P. A., & Kim, H. R. (1995). Fabrication of boron-carbide/boron heterojunction devices. Applied Physics Letters.

Fabrication of boron-carbide/boron heterojunction devices. / Hwang, Seong Don; Byun, Dong Jin; Ianno, N. J.; Dowben, P. A.; Kim, H. R.

In: Applied Physics Letters, 01.12.1995.

Research output: Contribution to journalArticle

Hwang, Seong Don ; Byun, Dong Jin ; Ianno, N. J. ; Dowben, P. A. ; Kim, H. R. / Fabrication of boron-carbide/boron heterojunction devices. In: Applied Physics Letters. 1995.
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