Fabrication of CeO2 buffer layer with high deposition rate on biaxially textured Ni-3%W substrate by electron beam evaporation

J. B. Lee, S. K. Park, B. J. Kim, H. J. Lee, S. S. Kim, S. H. Moon, Haigun Lee, G. W. Hong

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7 Citations (Scopus)

Abstract

CeO2 has been used as a buffer layer of a coated conductor because of good chemical and structural compatibility with YBCO. But cracks were often observed at the surface for films thicker than 100 nm deposited at a high temperature because of a large difference in a thermal expansion coefficient between metal and CeO2. The deposition rate was limited to be slow for getting good epitaxy. In order to increase the film deposition rate, while maintaining the epitaxy till a final thickness, two-step deposition process was tested. The thin seed layer with a thickness less than 10 nm was deposited with a deposition rate of 3 /s, and the homo-epitaxial layer at a thickness more than 240 nm was deposited at a deposition rate of 30 /s. The resulting CeO 2 films deposited at 600 °C showed a good texture with a Δ of 5.3°, Δω of 4.2° and Ra of 2.2 nm. The two-step process may be option for a low cost buffer layer for Ni-3%W metal substrates for the coated conductor.

Original languageEnglish
Pages (from-to)978-981
Number of pages4
JournalPhysica C: Superconductivity and its Applications
Volume471
Issue number21-22
DOIs
Publication statusPublished - 2011 Nov
Externally publishedYes

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Keywords

  • CeO
  • Coated conductor
  • Single buffer
  • Two-step process

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Electronic, Optical and Magnetic Materials

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