Fabrication of conducting-filament-embedded indium tin oxide electrodes: Application to lateral-type gallium nitride light-emitting diodes

Hee Dong Kim, Kyeong Heon Kim, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel conducting filament (CF)-embedded indium tin oxide (ITO) film is fabricated using an electrical breakdown method. To assess the performance of this layer as an ohmic contact, it is applied to GaN (gallium nitride) light-emitting diodes (LEDs) as a p-type electrode for comparison with typical GaN LEDs using metallic ITO. The operating voltage and output power of the LED with the CF embedded ITO are 3.93 V and 8.49 mW, respectively, at an injection current of 100 mA. This is comparable to the operating voltage and output power of the conventionally fabricated LEDs using metallic ITO (3.93 V and 8.43 mW). Moreover, the CF-ITO LED displays uniform and bright light emission indicating excellent current injection and spreading. These results suggest that the proposed method of forming ohmic contacts is at least as effective as the conventional method.

Original languageEnglish
Pages (from-to)28775-28783
Number of pages9
JournalOptics Express
Volume23
Issue number22
DOIs
Publication statusPublished - 2015 Nov 2

Fingerprint

gallium nitrides
indium oxides
tin oxides
filaments
light emitting diodes
conduction
fabrication
electrodes
electric contacts
injection
output
electric potential
electrical faults
light emission
oxide films

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Fabrication of conducting-filament-embedded indium tin oxide electrodes : Application to lateral-type gallium nitride light-emitting diodes. / Kim, Hee Dong; Kim, Kyeong Heon; Kim, Su Jin; Kim, Tae Geun.

In: Optics Express, Vol. 23, No. 22, 02.11.2015, p. 28775-28783.

Research output: Contribution to journalArticle

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