Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer

Taekyung Lim, Junebeom Han, Keumyoung Seo, Min Kyu Joo, Jae Sung Kim, Wung Yeon Kim, Gyu Tae Kim, Sanghyun Ju

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The controllability and stability of nanowire transistor characteristics are essential for the development of low-noise and fast-switching nano-electronic devices. In this study, the positive shift of threshold voltage and the improvement of interface quality on In2O3 nanowire transistors were simultaneously achieved by using octadecylphosphonic acid (OD-PA) self-assembly. Following the chemical bond of OD-PA molecules on the surface of In2O3 nanowires, the threshold voltage was positively shifted to 2.95 V, and the noise amplitude decreased to approximately 87.5%. The results suggest that an OD-PA self-assembled monolayer can be used to manipulate and stabilize the transistor characteristics of nanowire-based memory and display devices that require high-sensitivity, low-noise, and fast-response.

Original languageEnglish
Article number145203
Issue number14
Publication statusPublished - 2015 Apr 10


  • nanowire transistor
  • reliability
  • self-assembled monolayer
  • stability
  • water repellent

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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