Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer

Taekyung Lim, Junebeom Han, Keumyoung Seo, Min Kyu Joo, Jae Sung Kim, Wung Yeon Kim, Gyu-Tae Kim, Sanghyun Ju

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The controllability and stability of nanowire transistor characteristics are essential for the development of low-noise and fast-switching nano-electronic devices. In this study, the positive shift of threshold voltage and the improvement of interface quality on In2O3 nanowire transistors were simultaneously achieved by using octadecylphosphonic acid (OD-PA) self-assembly. Following the chemical bond of OD-PA molecules on the surface of In2O3 nanowires, the threshold voltage was positively shifted to 2.95 V, and the noise amplitude decreased to approximately 87.5%. The results suggest that an OD-PA self-assembled monolayer can be used to manipulate and stabilize the transistor characteristics of nanowire-based memory and display devices that require high-sensitivity, low-noise, and fast-response.

Original languageEnglish
Article number145203
JournalNanotechnology
Volume26
Issue number14
DOIs
Publication statusPublished - 2015 Apr 10

Fingerprint

Nanowires
Self assembled monolayers
Transistors
Noise
Fabrication
Acids
Threshold voltage
Equipment and Supplies
Nanoelectronics
Chemical bonds
Quality Improvement
Controllability
Self assembly
Display devices
Data storage equipment
Molecules

Keywords

  • nanowire transistor
  • reliability
  • self-assembled monolayer
  • stability
  • water repellent

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer. / Lim, Taekyung; Han, Junebeom; Seo, Keumyoung; Joo, Min Kyu; Kim, Jae Sung; Kim, Wung Yeon; Kim, Gyu-Tae; Ju, Sanghyun.

In: Nanotechnology, Vol. 26, No. 14, 145203, 10.04.2015.

Research output: Contribution to journalArticle

Lim, Taekyung ; Han, Junebeom ; Seo, Keumyoung ; Joo, Min Kyu ; Kim, Jae Sung ; Kim, Wung Yeon ; Kim, Gyu-Tae ; Ju, Sanghyun. / Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer. In: Nanotechnology. 2015 ; Vol. 26, No. 14.
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