Fabrication of DLC-coated field emitter triode using aluminum parting layer

Sanjo Lee, Sunup Lee, D. Jeon, K. R. Lee, Byeong Kwon Ju, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Coating silicon field emitter tips with a thin film of diamond-like carbon (DLC) seems to be a promising way to improve the performance of silicon emitter tips by enhancing the thermal conductivity and the hardness. If one deposits a DLC film onto the gated silicon emitter, DLC will be coated on the side wall of an insulating layer to increase the leakage current to the gate. Using an aluminum sacrificial layer on the side wall of an insulating layer before coating DLC film, we could coat a DLC film on the tips without contaminating the side wall. I-V measurement of the DLC-coated silicon triode showed that the leakage current to the gate was 2.6% of the anode current.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages381-384
Number of pages4
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

Fingerprint

triodes
emitters
diamonds
aluminum
fabrication
carbon
silicon
leakage
coatings
anodes
thermal conductivity
hardness
deposits
thin films

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Lee, S., Lee, S., Jeon, D., Lee, K. R., Ju, B. K., & Oh, M. H. (1997). Fabrication of DLC-coated field emitter triode using aluminum parting layer. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 381-384). Piscataway, NJ, United States: IEEE.

Fabrication of DLC-coated field emitter triode using aluminum parting layer. / Lee, Sanjo; Lee, Sunup; Jeon, D.; Lee, K. R.; Ju, Byeong Kwon; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. ed. / Anon. Piscataway, NJ, United States : IEEE, 1997. p. 381-384.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, S, Lee, S, Jeon, D, Lee, KR, Ju, BK & Oh, MH 1997, Fabrication of DLC-coated field emitter triode using aluminum parting layer. in Anon (ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 381-384, Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, 97/8/17.
Lee S, Lee S, Jeon D, Lee KR, Ju BK, Oh MH. Fabrication of DLC-coated field emitter triode using aluminum parting layer. In Anon, editor, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1997. p. 381-384
Lee, Sanjo ; Lee, Sunup ; Jeon, D. ; Lee, K. R. ; Ju, Byeong Kwon ; Oh, Myung Hwan. / Fabrication of DLC-coated field emitter triode using aluminum parting layer. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. editor / Anon. Piscataway, NJ, United States : IEEE, 1997. pp. 381-384
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