Fabrication of Fe3O4 thin film using reactive DC magnetron sputtering

Minkyung Jung, Sungmin Park, Daewon Park, Seong Rae Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the effects of deposition conditions on the fabrication of Fe3O4 thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated Fe3O4 film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the Fe3O4 film were 298 emu/cc, 4.0× 10-2 Ωcm, and 125 K., respectively.

Original languageEnglish
Pages (from-to)378-382
Number of pages5
JournalJournal of Korean Institute of Metals and Materials
Volume47
Issue number6
Publication statusPublished - 2009 Jun 1

Fingerprint

Magnetron Sputtering
Magnetron sputtering
Thin Films
Fabrication
Thin films
Reactive sputtering
Saturation magnetization
Oxide films
Film thickness
Structural properties
Magnetic properties
Electric properties
Flow rate
Oxygen
Sputtering
Magnetic Properties
Electrical Properties
Resistivity
Substrates
Magnetization

Keywords

  • FeO film
  • Half metallic reactive sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Modelling and Simulation

Cite this

Fabrication of Fe3O4 thin film using reactive DC magnetron sputtering. / Jung, Minkyung; Park, Sungmin; Park, Daewon; Lee, Seong Rae.

In: Journal of Korean Institute of Metals and Materials, Vol. 47, No. 6, 01.06.2009, p. 378-382.

Research output: Contribution to journalArticle

Jung, Minkyung ; Park, Sungmin ; Park, Daewon ; Lee, Seong Rae. / Fabrication of Fe3O4 thin film using reactive DC magnetron sputtering. In: Journal of Korean Institute of Metals and Materials. 2009 ; Vol. 47, No. 6. pp. 378-382.
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