GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.
|Number of pages||3|
|Publication status||Published - 1998 Jan 8|
ASJC Scopus subject areas
- Electrical and Electronic Engineering