Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

T. G. Kim, C. S. Son, S. M. Hwang, E. K. Kim, S. K. Min, S. J. Leem, J. H. Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.

Original languageEnglish
Pages (from-to)85-87
Number of pages3
JournalElectronics Letters
Volume34
Issue number1
DOIs
Publication statusPublished - 1998 Jan 8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition'. Together they form a unique fingerprint.

  • Cite this