Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition

Tae Geun Kim, C. S. Son, S. M. Hwang, E. K. Kim, S. K. Min, S. J. Leem, Jung ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250μm long uncoated cavity.

Original languageEnglish
Pages (from-to)85-87
Number of pages3
JournalElectronics Letters
Volume34
Issue number1
Publication statusPublished - 1998 Jan 8

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Wet etching
Organic chemicals
Metallorganic chemical vapor deposition
Chemical vapor deposition
Fabrication
Wavelength
Lasers
Metals
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition. / Kim, Tae Geun; Son, C. S.; Hwang, S. M.; Kim, E. K.; Min, S. K.; Leem, S. J.; Park, Jung ho.

In: Electronics Letters, Vol. 34, No. 1, 08.01.1998, p. 85-87.

Research output: Contribution to journalArticle

Kim, Tae Geun ; Son, C. S. ; Hwang, S. M. ; Kim, E. K. ; Min, S. K. ; Leem, S. J. ; Park, Jung ho. / Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition. In: Electronics Letters. 1998 ; Vol. 34, No. 1. pp. 85-87.
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