Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography

Byung Jae Kim, Hyunjung Jung, Hong Yeol Kim, Joona Bang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

In this study, we present a facile route to fabricate GaN nanorods by employing the nanosphere lithography (NSL) technique. Compared to previous approaches, it was demonstrated that arrays of silica (SiO2) nanospheres can be effectively used as etching masks for the inductively coupled plasma etching process. By adjusting the etching conditions between SiO2 nanospheres and GaN substrates, well-defined nanorods, which were as long as a few microns with controllable diameters, were successfully fabricated. This method is much simpler than any other technique currently being used, and can be generally applied to fabricate various types of nanorods.

Original languageEnglish
Pages (from-to)3859-3861
Number of pages3
JournalThin Solid Films
Volume517
Issue number14
DOIs
Publication statusPublished - 2009 May 29

Keywords

  • GaN nanorods
  • Nanosphere lithography
  • Plasma etching
  • SiO particles

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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