Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography

Heon Lee, Sung Hoon Hong, Ki Yeon Yang, Gun Young Jung

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1

Fingerprint

Nanoimprint lithography
random access memory
lithography
Data storage equipment
Fabrication
fabrication
Phase change memory
confining
resins
dynamic range
emerging
Electric power utilization
Resins
Metals
metals

Keywords

  • Chalcogenide
  • Lift-off
  • Nanoimprint lithography
  • Phase change memory
  • Phase transition

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography. / Lee, Heon; Hong, Sung Hoon; Yang, Ki Yeon; Jung, Gun Young.

In: Microelectronic Engineering, Vol. 84, No. 4, 01.04.2007, p. 573-576.

Research output: Contribution to journalArticle

Lee, Heon ; Hong, Sung Hoon ; Yang, Ki Yeon ; Jung, Gun Young. / Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography. In: Microelectronic Engineering. 2007 ; Vol. 84, No. 4. pp. 573-576.
@article{27abfeb4c04f4eca8591149fb51d5721,
title = "Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography",
abstract = "Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.",
keywords = "Chalcogenide, Lift-off, Nanoimprint lithography, Phase change memory, Phase transition",
author = "Heon Lee and Hong, {Sung Hoon} and Yang, {Ki Yeon} and Jung, {Gun Young}",
year = "2007",
month = "4",
day = "1",
doi = "10.1016/j.mee.2006.11.009",
language = "English",
volume = "84",
pages = "573--576",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Fabrication of Ge2Sb2Te5 based PRAM device at 60 nm scale by using UV nanoimprint lithography

AU - Lee, Heon

AU - Hong, Sung Hoon

AU - Yang, Ki Yeon

AU - Jung, Gun Young

PY - 2007/4/1

Y1 - 2007/4/1

N2 - Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

AB - Phase change memory is one of the most promising non-volatile memory for the next generation memory media due to its simplicity, wide dynamic range, fast switching speed and possibly low power consumption. Low power consuming operation of phase change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Nanoimprint lithography is an emerging lithographic technique in which surface protrusions of a mold such as sub-100 nm patterns are transferred into a resin layer easily. In this study, crossbar structures of phase change device array based on Ge2Sb2Te5 were successfully fabricated at 60 nm scale by two consecutive UV nanoimprint lithography and metal lift-off process, which showed on/off resistance ratio up to 3000.

KW - Chalcogenide

KW - Lift-off

KW - Nanoimprint lithography

KW - Phase change memory

KW - Phase transition

UR - http://www.scopus.com/inward/record.url?scp=33847631255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847631255&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2006.11.009

DO - 10.1016/j.mee.2006.11.009

M3 - Article

VL - 84

SP - 573

EP - 576

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 4

ER -