Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin

Kyeong Jae Byeon, Joong Yeon Cho, Han Byeol Jo, Heon Lee

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.

Original languageEnglish
Pages (from-to)354-360
Number of pages7
JournalApplied Surface Science
Volume346
DOIs
Publication statusPublished - 2015 Aug 15

Keywords

  • Light extraction efficiency
  • Light-emitting diodes (LEDs)
  • Nanoimprint lithography (NIL)
  • ZnO-nanoparticle-dispersed resin (ZNDR)

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin'. Together they form a unique fingerprint.

  • Cite this