Abstract
We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.
| Original language | English |
|---|---|
| Pages (from-to) | 354-360 |
| Number of pages | 7 |
| Journal | Applied Surface Science |
| Volume | 346 |
| DOIs | |
| Publication status | Published - 2015 Aug 15 |
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Keywords
- Light extraction efficiency
- Light-emitting diodes (LEDs)
- Nanoimprint lithography (NIL)
- ZnO-nanoparticle-dispersed resin (ZNDR)
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin. / Byeon, Kyeong Jae; Cho, Joong Yeon; Jo, Han Byeol; Lee, Heon.
In: Applied Surface Science, Vol. 346, 15.08.2015, p. 354-360.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin
AU - Byeon, Kyeong Jae
AU - Cho, Joong Yeon
AU - Jo, Han Byeol
AU - Lee, Heon
PY - 2015/8/15
Y1 - 2015/8/15
N2 - We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.
AB - We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.
KW - Light extraction efficiency
KW - Light-emitting diodes (LEDs)
KW - Nanoimprint lithography (NIL)
KW - ZnO-nanoparticle-dispersed resin (ZNDR)
UR - http://www.scopus.com/inward/record.url?scp=84930016615&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84930016615&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2015.03.022
DO - 10.1016/j.apsusc.2015.03.022
M3 - Article
AN - SCOPUS:84930016615
VL - 346
SP - 354
EP - 360
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -