Fabrication of high density nano-pillar type phase change memory devices using flexible AAO shaped template

Sung Hoon Hong, Byeong Ju Bae, Heon Lee, Jun Ho Jeong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this study, the high density nano-pillar type phase change memory was fabricated using duplicating nano-patterns of the anodic alumina oxide (AAO) by nanoimprint process. The high density nano-hole array of AAO template was transferred to the flexible PVC polymer template using hot embossing method. To use the flexible AAO shaped template for UV-NIL, the high density nano-pillar type Ge2Sb2Te5 patterns were fabricated, and the electrical properties of the device were evaluated by conducting atomic force microscopy, connected electrical measurement system. To use the flexible AAO shaped template for UV-NIL, high density GST pattern could be fabricated even on the flexible polyimide (PI) substrate.

Original languageEnglish
Pages (from-to)2081-2084
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

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Keywords

  • Anodic alumina oxide (AAO) template
  • Conducting AFM
  • Nano-pillar device
  • Nanoimprint lithography
  • Phase change memory (PRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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