Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

Hwan Hee Jeong, Sang Youl Lee, June O. Song, Kwang Ki Choi, Seok Hun Lee, Hee Seok Choi, Tchang Hun Oh, Yong Hyun Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.

Original languageEnglish
Pages (from-to)H322-H324
JournalElectrochemical and Solid-State Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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