Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer

Hwan Hee Jeong, Sang Youl Lee, June O. Song, Kwang Ki Choi, Seok Hun Lee, Hee Seok Choi, Tchang Hun Oh, Yong Hyun Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO2 and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO2 layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by ∼20% at 100 mA) compared to LEDs with the SiO2 layers.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 2009 Jul 31

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
light emitting diodes
conduction
Fabrication
fabrication
Passivation
indium tin oxide
Lasers
Electric potential
passivity
injection
output
electric potential
lasers

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer. / Jeong, Hwan Hee; Lee, Sang Youl; Song, June O.; Choi, Kwang Ki; Lee, Seok Hun; Choi, Hee Seok; Oh, Tchang Hun; Lee, Yong Hyun; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 9, 31.07.2009.

Research output: Contribution to journalArticle

Jeong, Hwan Hee ; Lee, Sang Youl ; Song, June O. ; Choi, Kwang Ki ; Lee, Seok Hun ; Choi, Hee Seok ; Oh, Tchang Hun ; Lee, Yong Hyun ; Seong, Tae Yeon. / Fabrication of high performance GaN-based vertical light-emitting diodes using a transparent conducting indium tin oxide channel layer. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 9.
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AU - Lee, Seok Hun

AU - Choi, Hee Seok

AU - Oh, Tchang Hun

AU - Lee, Yong Hyun

AU - Seong, Tae Yeon

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