Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution

Gwiy Sang Chung, Chin Sung Park, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents the fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. When IPA was added TMAH solution, the flatness of etching front is improved and undercutting is reduced, but the etch rate of (100) Si is decreased. The (100) Si etch rate is improved with addition of pyrazine. The (100) Si etch rate of 0.8/min which is faster by 13% than pure TMAH 20 wt.% solution is obtained using TMAH 20 wt.%/pyrazine 0.5 g and the etch rate of (100) Si is decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.% solution, the flatness variations of etching front is not observed and undercutting ratio is reduced about 30-50%. Addition of pyrazine to TMAH increases the etch rate of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n- and p-type Si in TMAH/IPA/pyrazine solution were obtained. OCP (Open Circuit Potential) and PP (Passivation Potential) of n- and p-type Si were also obtained, and applied potential was selected between n- and p-type Si's PP. 801 Si micro-diaphragms having 20 thick were fabricated on 5 inches Si wafer using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. The average thicknesses of micro-diaphragms were 20.03 and standard deviation was ±0.26.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages346-355
Number of pages10
Volume3892
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 Device and Process Technologies for MEMS and Microelectronics - Royal Pines Resort, Aust
Duration: 1999 Oct 271999 Oct 29

Other

OtherProceedings of the 1999 Device and Process Technologies for MEMS and Microelectronics
CityRoyal Pines Resort, Aust
Period99/10/2799/10/29

Fingerprint

pyrazines
diaphragms
Diaphragms
Fabrication
fabrication
Passivation
Etching
flatness
passivity
etching
standard deviation
Networks (circuits)
wafers
curves

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Chung, G. S., Park, C. S., & Ju, B. K. (1999). Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3892, pp. 346-355). Society of Photo-Optical Instrumentation Engineers.

Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution. / Chung, Gwiy Sang; Park, Chin Sung; Ju, Byeong Kwon.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3892 Society of Photo-Optical Instrumentation Engineers, 1999. p. 346-355.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, GS, Park, CS & Ju, BK 1999, Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3892, Society of Photo-Optical Instrumentation Engineers, pp. 346-355, Proceedings of the 1999 Device and Process Technologies for MEMS and Microelectronics, Royal Pines Resort, Aust, 99/10/27.
Chung GS, Park CS, Ju BK. Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3892. Society of Photo-Optical Instrumentation Engineers. 1999. p. 346-355
Chung, Gwiy Sang ; Park, Chin Sung ; Ju, Byeong Kwon. / Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3892 Society of Photo-Optical Instrumentation Engineers, 1999. pp. 346-355
@inproceedings{d357c9aa9f86433db8538a243dc948c2,
title = "Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution",
abstract = "This paper presents the fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. When IPA was added TMAH solution, the flatness of etching front is improved and undercutting is reduced, but the etch rate of (100) Si is decreased. The (100) Si etch rate is improved with addition of pyrazine. The (100) Si etch rate of 0.8/min which is faster by 13{\%} than pure TMAH 20 wt.{\%} solution is obtained using TMAH 20 wt.{\%}/pyrazine 0.5 g and the etch rate of (100) Si is decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.{\%} solution, the flatness variations of etching front is not observed and undercutting ratio is reduced about 30-50{\%}. Addition of pyrazine to TMAH increases the etch rate of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n- and p-type Si in TMAH/IPA/pyrazine solution were obtained. OCP (Open Circuit Potential) and PP (Passivation Potential) of n- and p-type Si were also obtained, and applied potential was selected between n- and p-type Si's PP. 801 Si micro-diaphragms having 20 thick were fabricated on 5 inches Si wafer using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. The average thicknesses of micro-diaphragms were 20.03 and standard deviation was ±0.26.",
author = "Chung, {Gwiy Sang} and Park, {Chin Sung} and Ju, {Byeong Kwon}",
year = "1999",
language = "English",
volume = "3892",
pages = "346--355",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - GEN

T1 - Fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop in TMAH/IPA/pyrazine solution

AU - Chung, Gwiy Sang

AU - Park, Chin Sung

AU - Ju, Byeong Kwon

PY - 1999

Y1 - 1999

N2 - This paper presents the fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. When IPA was added TMAH solution, the flatness of etching front is improved and undercutting is reduced, but the etch rate of (100) Si is decreased. The (100) Si etch rate is improved with addition of pyrazine. The (100) Si etch rate of 0.8/min which is faster by 13% than pure TMAH 20 wt.% solution is obtained using TMAH 20 wt.%/pyrazine 0.5 g and the etch rate of (100) Si is decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.% solution, the flatness variations of etching front is not observed and undercutting ratio is reduced about 30-50%. Addition of pyrazine to TMAH increases the etch rate of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n- and p-type Si in TMAH/IPA/pyrazine solution were obtained. OCP (Open Circuit Potential) and PP (Passivation Potential) of n- and p-type Si were also obtained, and applied potential was selected between n- and p-type Si's PP. 801 Si micro-diaphragms having 20 thick were fabricated on 5 inches Si wafer using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. The average thicknesses of micro-diaphragms were 20.03 and standard deviation was ±0.26.

AB - This paper presents the fabrication of high-yield Si micro-diaphragms using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. When IPA was added TMAH solution, the flatness of etching front is improved and undercutting is reduced, but the etch rate of (100) Si is decreased. The (100) Si etch rate is improved with addition of pyrazine. The (100) Si etch rate of 0.8/min which is faster by 13% than pure TMAH 20 wt.% solution is obtained using TMAH 20 wt.%/pyrazine 0.5 g and the etch rate of (100) Si is decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.% solution, the flatness variations of etching front is not observed and undercutting ratio is reduced about 30-50%. Addition of pyrazine to TMAH increases the etch rate of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n- and p-type Si in TMAH/IPA/pyrazine solution were obtained. OCP (Open Circuit Potential) and PP (Passivation Potential) of n- and p-type Si were also obtained, and applied potential was selected between n- and p-type Si's PP. 801 Si micro-diaphragms having 20 thick were fabricated on 5 inches Si wafer using electrochemical etch-stop method in TMAH/IPA/pyrazine solution. The average thicknesses of micro-diaphragms were 20.03 and standard deviation was ±0.26.

UR - http://www.scopus.com/inward/record.url?scp=0033345786&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033345786&partnerID=8YFLogxK

M3 - Conference contribution

VL - 3892

SP - 346

EP - 355

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -