Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface

Kang Ho Park, Mincheol Shin, Jeong Sook Ha, Wan Soo Yun, Young Jo Ko

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Nanostructures composed of Ag clusters on an Sb-terminated Si surface were designed in a highly controlled manner and the electric conduction through Ag nanoclusters to the silicon substrate was investigated by using a scanning tunneling microscopy/spectroscopy. It was found that the lateral conduction between neighboring Ag clusters significantly contributed to the tunneling current-voltage characteristics, and the metallic single-electron tunneling structures employing the lateral conduction channels at room temperature can be fabricated via a field-induced manipulation of Ag clusters.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1999 Jul 5
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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