Fabrication of metal nano dot dry etching mask using block copolymer thin film

G. B. Kang, S. I. Kim, Y. T. Kim, Jung ho Park

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Dense and periodic arrays of Au, Cr, Ni and Al nano dots were fabricated on silicon substrate. To obtain nano size patterns, self-assembling resists were used to produce a layer of uniformly distributed parallel cylinders of PMMA in a PS matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing, forming a PS mask to transfer the pattern. The patterned holes of PS template were approximately 20 nm wide, 40 nm deep, and 50 nm apart. About 100 Å-thick Au, 30 Å-thick Cr, Ni, and Al thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process using N-formyldimethylamine (DMF). Arrays of metal nano dots were dry etched by using fluorine-based reactive ion etching (RIE). As a result, the nano template of PS was analyzed with field-emission scanning electron microscope (FESEM) and the sizes of Cr, Ni, Au and Al nano dots left on Si surface were measured by atomic force microscope (AFM). The sizes of metal nano dots were in the range of 17-22 nm.

Original languageEnglish
JournalCurrent Applied Physics
Volume9
Issue number1 SUPPL.
DOIs
Publication statusPublished - 2009 Jan 1
Externally publishedYes

Fingerprint

Dry etching
Polymethyl Methacrylate
block copolymers
Block copolymers
Masks
masks
templates
Metals
etching
Fabrication
Thin films
fabrication
Fluorine
Reactive ion etching
Silicon
Evaporators
thin films
Acetic acid
Acetic Acid
Field emission

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of metal nano dot dry etching mask using block copolymer thin film. / Kang, G. B.; Kim, S. I.; Kim, Y. T.; Park, Jung ho.

In: Current Applied Physics, Vol. 9, No. 1 SUPPL., 01.01.2009.

Research output: Contribution to journalArticle

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